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Title: Method for producing high energy electroluminescent devices

Abstract

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Inventors:
 [1];  [2];  [3]
  1. (Yorktown Heights, NY)
  2. (Pleasantville, NY)
  3. (Croton-on-Hudson, NY)
Issue Date:
OSTI Identifier:
868481
Patent Number(s):
5151383
Application Number:
07/307,154
Assignee:
International Business Machines Corporation (Armonk, NY) OSTI
DOE Contract Number:  
SERI-ZZ-0-9319-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; producing; energy; electroluminescent; devices; described; fabricating; exhibiting; visible; electroluminescence; temperature; doped; layer; amorphous; hydrogenated; silicon; a-si; deposited; substrate; homogeneous; chemical; vapor; deposition; h-cvd; held; 200; degree; in-situ; amount; hydrogen; incorporated; 12-50; atomic; percent; bandgap; preferrable; embodiments; conductivity; chosen; accordance; device; requirements; 10; 16; -10; 19; carriers; cm; depends; tuned; changing; atomic percent; chemical vapor; vapor deposition; doped layer; substrate temperature; electroluminescent devices; rate temperature; deposited layer; /438/257/

Citation Formats

Meyerson, Bernard S., Scott, Bruce A., and Wolford, Jr., Donald J. Method for producing high energy electroluminescent devices. United States: N. p., 1992. Web.
Meyerson, Bernard S., Scott, Bruce A., & Wolford, Jr., Donald J. Method for producing high energy electroluminescent devices. United States.
Meyerson, Bernard S., Scott, Bruce A., and Wolford, Jr., Donald J. Tue . "Method for producing high energy electroluminescent devices". United States. https://www.osti.gov/servlets/purl/868481.
@article{osti_868481,
title = {Method for producing high energy electroluminescent devices},
author = {Meyerson, Bernard S. and Scott, Bruce A. and Wolford, Jr., Donald J.},
abstractNote = {A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {9}
}

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