Method for producing high energy electroluminescent devices

Meyerson, Bernard S; Scott, Bruce A

Title: Method for producing high energy electroluminescent devices

Abstract

A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

Inventors:

Meyerson, Bernard S ^[1]; Scott, Bruce A ^[2]; Wolford, Jr., Donald J. ^[3]

Yorktown Heights, NY
Pleasantville, NY
(Croton-on-Hudson, NY)

Issue Date:: 1992-01-01

OSTI Identifier:: 868481

Patent Number(s):: 5151383

Application Number:: 07/307,154

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/0012 - {p-i-n devices}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/463 - {Cooling of the substrate}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/18 - within the light emitting region

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/46 - characterised by the method used for heating the substrate

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/0033 - {having Schottky barriers}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/24 - Deposition of silicon only

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/0058 - {comprising amorphous semiconductors}

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DOE Contract Number:: SERI-ZZ-0-9319-1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; producing; energy; electroluminescent; devices; described; fabricating; exhibiting; visible; electroluminescence; temperature; doped; layer; amorphous; hydrogenated; silicon; a-si; deposited; substrate; homogeneous; chemical; vapor; deposition; h-cvd; held; 200; degree; in-situ; amount; hydrogen; incorporated; 12-50; atomic; percent; bandgap; preferrable; embodiments; conductivity; chosen; accordance; device; requirements; 10; 16; -10; 19; carriers; cm; depends; tuned; changing; atomic percent; chemical vapor; vapor deposition; doped layer; substrate temperature; electroluminescent devices; rate temperature; deposited layer; /438/257/

Citation Formats


                    Meyerson, Bernard S, Scott, Bruce A, and Wolford, Jr., Donald J. Method for producing high energy electroluminescent devices.  United States: N. p., 1992. 
        Web.

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                    Meyerson, Bernard S, Scott, Bruce A, & Wolford, Jr., Donald J. Method for producing high energy electroluminescent devices.  United States.

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                    Meyerson, Bernard S, Scott, Bruce A, and Wolford, Jr., Donald J. Wed .  
        "Method for producing high energy electroluminescent devices".  United States.  https://www.osti.gov/servlets/purl/868481.

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@article{osti_868481,

  title        = {Method for producing high energy electroluminescent devices},

  author       = {Meyerson, Bernard S and Scott, Bruce A and Wolford, Jr., Donald J.},

  abstractNote = {A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1992},

  month        = {1}

}

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Works referenced in this record:

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
journal, October 1981

Scott, B. A.; Plecenik, R. M.; Simonyi, E. E.
Le Journal de Physique Colloques, Vol. 42, Issue C4
https://doi.org/10.1051/jphyscol:19814139

Efficient visible photoluminescence in the binary a ‐Si:H _x alloy system
journal, February 1983

Wolford, D. J.; Reimer, J. A.; Scott, B. A.
Applied Physics Letters, Vol. 42, Issue 4
https://doi.org/10.1063/1.93920

The preparation of i n s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
journal, March 1983

Meyerson, B. S.; Scott, B. A.; Wolford, D. J.
Journal of Applied Physics, Vol. 54, Issue 3
https://doi.org/10.1063/1.332172

Post-hydrogenation of CVD deposited a-Si films
journal, January 1980

Sol, Nicole; Kaplan, Daniel; Dieumegard, Dominique
Journal of Non-Crystalline Solids, Vol. 35-36
https://doi.org/10.1016/0022-3093(80)90609-2

Defect compensation in doped CVD amorphous silicon
journal, January 1980

Hirose, M.; Taniguchi, M.; Nakashita, T.
Journal of Non-Crystalline Solids, Vol. 35-36
https://doi.org/10.1016/0022-3093(80)90610-9

Efficient visible luminescence from hydrogenated amorphous silicon
journal, March 1983

Wolford, D. J.; Scott, B. A.; Reimer, J. A.
Physica B+C, Vol. 117-118
https://doi.org/10.1016/0378-4363(83)90694-0

Theta-Pinch Plasma Hydrogenation of Evaporated Amorphous Silicon Films
journal, October 1981

John, P. K.; Wong, S. K.; Gogna, P. K.
Le Journal de Physique Colloques, Vol. 42, Issue C4
https://doi.org/10.1051/jphyscol:19814140

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Title: Method for producing high energy electroluminescent devices

Abstract

Citation Formats

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD journal, October 1981

Efficient visible photoluminescence in the binary a ‐Si:H x alloy system journal, February 1983

The preparation of i n s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition journal, March 1983

Post-hydrogenation of CVD deposited a-Si films journal, January 1980

Defect compensation in doped CVD amorphous silicon journal, January 1980

Efficient visible luminescence from hydrogenated amorphous silicon journal, March 1983

Theta-Pinch Plasma Hydrogenation of Evaporated Amorphous Silicon Films journal, October 1981

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
journal, October 1981

Efficient visible photoluminescence in the binary a ‐Si:H _x alloy system
journal, February 1983

The preparation of i n s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
journal, March 1983

Post-hydrogenation of CVD deposited a-Si films
journal, January 1980

Defect compensation in doped CVD amorphous silicon
journal, January 1980

Efficient visible luminescence from hydrogenated amorphous silicon
journal, March 1983

Theta-Pinch Plasma Hydrogenation of Evaporated Amorphous Silicon Films
journal, October 1981