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Title: Controlled growth of semiconductor crystals

Abstract

A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted,more » and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.« less

Inventors:
 [1]
  1. Richmond, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
868396
Patent Number(s):
5131975
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
controlled; growth; semiconductor; crystals; method; iii-v; ii-vi; related; single; suppresses; random; nucleation; sticking; melt; crucible; walls; pieces; oxide; boron; dispersed; throughout; comminuted; solid; charge; preferably; water; content; 600; ppm; temperature; raised; m1; 723; degree; allowed; form; reasonably; uniform; liquid; layer; bottom; surfaces; still-solid; approximately; m2; material; crystal; proceeds; encapsulated; vertical; gradient; freeze; process; half; grown; dislocation; density; 1000; cm; nitride; inner; surface; oxidized; melted; thicknesses; 50; semiconductor single; liquid layer; charge material; melt temperature; crystals grown; dispersed throughout; boron oxide; bottom surfaces; boron nitride; inner surface; single crystal; oxide layer; single crystals; crystal growth; bottom surface; water content; semiconductor charge; dislocation density; solid semiconductor; solid boron; semiconductor crystal; /117/

Citation Formats

Bourret-Courchesne, Edith D. Controlled growth of semiconductor crystals. United States: N. p., 1992. Web.
Bourret-Courchesne, Edith D. Controlled growth of semiconductor crystals. United States.
Bourret-Courchesne, Edith D. Wed . "Controlled growth of semiconductor crystals". United States. https://www.osti.gov/servlets/purl/868396.
@article{osti_868396,
title = {Controlled growth of semiconductor crystals},
author = {Bourret-Courchesne, Edith D},
abstractNote = {A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Works referenced in this record:

A Technique for Pulling Single Crystals of Volatile Materials
journal, June 1962


Vertical gradient freeze growth of gallium arsenide and naphthalene: Theory and practice
journal, June 1974


Growth of Low Strain GaP by Liquid-Encapsulation, Vertical-Gradient Freeze Technique
journal, January 1973


Notizen: Herstellung von InAs- und GaAs-Einkristallen
journal, June 1956


Vertical-gradient-freeze growth of GaP
journal, August 1976


Liquid encapsulated, vertical bridgman growth of large diameter, low dislocation density, semi-insulating GaAs
journal, March 1989


Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure
journal, January 1970


Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals
journal, April 1965


Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle
journal, January 1918


A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals
journal, April 1986