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Title: Process for forming one or more substantially pure layers in substrate material using ion implantation

Abstract

A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.

Inventors:
 [1];  [2];  [3]
  1. (San Ramon, CA)
  2. (New Carrollton, MD)
  3. (Davis, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
868358
Patent Number(s):
5124174
Assignee:
United States of America as represented by United States (Washington, DC) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; substantially; pure; layers; substrate; material; implantation; disclosed; monocrystalline; layer; implantable; element; selecting; implanted; temperatures; limited; mutual; solubility; form; intermediate; phases; implanting; sufficient; amount; permit; formation; desired; annealing; step; required; formed; article; implantable element; sufficient amount; substantially pure; substrate material; annealing step; pure layer; permit formation; desired layer; crystalline substrate; pure layers; monocrystalline layer; crystalline layer; /427/204/

Citation Formats

Musket, Ronald G., Brown, David W., and Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1992. Web.
Musket, Ronald G., Brown, David W., & Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, Ronald G., Brown, David W., and Munir, Zuhair A. Wed . "Process for forming one or more substantially pure layers in substrate material using ion implantation". United States. https://www.osti.gov/servlets/purl/868358.
@article{osti_868358,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, Ronald G. and Brown, David W. and Munir, Zuhair A.},
abstractNote = {A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

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