skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cadmium zinc sulfide by solution growth

Abstract

A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

Inventors:
 [1]
  1. (Seattle, WA)
Issue Date:
OSTI Identifier:
868282
Patent Number(s):
5112410
Application Number:
07/563,494
Assignee:
Boeing Company (Seattle, WA) OSTI
DOE Contract Number:  
ZL-8-06031-8
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
cadmium; zinc; sulfide; solution; growth; process; depositing; layers; ii-vi; compound; cdzns; aqueous; technique; quality; suitable; efficiency; photovoltaic; devices; benefit; band; edge; shift; resulting; inclusion; zn; comprising; cdcl; 5h; nh; oh; zncl; thiourea; cs; combined; placed; deposition; cell; substrate; form; 10; nm; film; sequentially; repeated; achieve; independent; multiple; concentrations; zinc sulfide; multiple layer; aqueous solution; solution comprising; cadmium zinc; multiple layers; solution growth; band edge; efficiency photovoltaic; /136/257/427/428/438/

Citation Formats

Chen, Wen S. Cadmium zinc sulfide by solution growth. United States: N. p., 1992. Web.
Chen, Wen S. Cadmium zinc sulfide by solution growth. United States.
Chen, Wen S. Tue . "Cadmium zinc sulfide by solution growth". United States. https://www.osti.gov/servlets/purl/868282.
@article{osti_868282,
title = {Cadmium zinc sulfide by solution growth},
author = {Chen, Wen S.},
abstractNote = {A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {5}
}

Patent:

Save / Share: