Hard carbon nitride and method for preparing same
Abstract
Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.
- Inventors:
-
- Berkeley, CA
- Walnut Creek, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 868275
- Patent Number(s):
- 5110679
- Assignee:
- Regents of University of California (Berkeley, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- hard; carbon; nitride; method; preparing; novel; crystalline; alpha; silicon; nitride-like; -carbon; beta; formed; sputtering; presence; nitrogen; atmosphere; single; crystal; germanium; respectively; substrate; hard carbon; silicon nitride; single crystal; nitrogen atmosphere; silicon nitride-; silicon nitride-like; -carbon nitride; /428/204/423/
Citation Formats
Haller, Eugene E, Cohen, Marvin L, and Hansen, William L. Hard carbon nitride and method for preparing same. United States: N. p., 1992.
Web.
Haller, Eugene E, Cohen, Marvin L, & Hansen, William L. Hard carbon nitride and method for preparing same. United States.
Haller, Eugene E, Cohen, Marvin L, and Hansen, William L. Wed .
"Hard carbon nitride and method for preparing same". United States. https://www.osti.gov/servlets/purl/868275.
@article{osti_868275,
title = {Hard carbon nitride and method for preparing same},
author = {Haller, Eugene E and Cohen, Marvin L and Hansen, William L},
abstractNote = {Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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