skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hard carbon nitride and method for preparing same

Abstract

Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

Inventors:
 [1];  [1];  [2]
  1. (Berkeley, CA)
  2. (Walnut Creek, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
868275
Patent Number(s):
5110679
Assignee:
Regents of University of California (Berkeley, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
hard; carbon; nitride; method; preparing; novel; crystalline; alpha; silicon; nitride-like; -carbon; beta; formed; sputtering; presence; nitrogen; atmosphere; single; crystal; germanium; respectively; substrate; hard carbon; silicon nitride; single crystal; nitrogen atmosphere; silicon nitride-; silicon nitride-like; -carbon nitride; /428/204/423/

Citation Formats

Haller, Eugene E., Cohen, Marvin L., and Hansen, William L. Hard carbon nitride and method for preparing same. United States: N. p., 1992. Web.
Haller, Eugene E., Cohen, Marvin L., & Hansen, William L. Hard carbon nitride and method for preparing same. United States.
Haller, Eugene E., Cohen, Marvin L., and Hansen, William L. Wed . "Hard carbon nitride and method for preparing same". United States. https://www.osti.gov/servlets/purl/868275.
@article{osti_868275,
title = {Hard carbon nitride and method for preparing same},
author = {Haller, Eugene E. and Cohen, Marvin L. and Hansen, William L.},
abstractNote = {Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Patent:

Save / Share: