Method of making an ion-implanted planar-buried-heterostructure diode laser
Abstract
Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
- Inventors:
-
- Albuquerque, NM
- Tijeras, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 868227
- Patent Number(s):
- 5102825
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; ion-implanted; planar-buried-heterostructure; diode; laser; graded-index; separate-confinement-heterostructure; semiconductor; 10; single; quantum; multi-quantum; active; stripe; 12; disposed; p-type; compositionally; graded; iii-v; cladding; lever; 14; n-type; layer; 16; iion; implanted; region; 28; 26; regions; defining; lateral; extent; compositionally graded; diode laser; p-type region; n-type region; semiconductor diode; cladding layer; active stripe; lateral extent; separate-confinement-heterostructure semiconductor; single quantum; implanted region; planar-buried-heterostructure diode; ion-implanted planar-buried-heterostructure; /438/148/
Citation Formats
Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Method of making an ion-implanted planar-buried-heterostructure diode laser. United States: N. p., 1992.
Web.
Brennan, Thomas M, Hammons, Burrell E, Myers, David R, & Vawter, Gregory A. Method of making an ion-implanted planar-buried-heterostructure diode laser. United States.
Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Wed .
"Method of making an ion-implanted planar-buried-heterostructure diode laser". United States. https://www.osti.gov/servlets/purl/868227.
@article{osti_868227,
title = {Method of making an ion-implanted planar-buried-heterostructure diode laser},
author = {Brennan, Thomas M and Hammons, Burrell E and Myers, David R and Vawter, Gregory A},
abstractNote = {Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}
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