skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of making an ion-implanted planar-buried-heterostructure diode laser

Abstract

Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Inventors:
 [1];  [2];  [1];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
868227
Patent Number(s):
5102825
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; ion-implanted; planar-buried-heterostructure; diode; laser; graded-index; separate-confinement-heterostructure; semiconductor; 10; single; quantum; multi-quantum; active; stripe; 12; disposed; p-type; compositionally; graded; iii-v; cladding; lever; 14; n-type; layer; 16; iion; implanted; region; 28; 26; regions; defining; lateral; extent; compositionally graded; diode laser; p-type region; n-type region; semiconductor diode; cladding layer; active stripe; lateral extent; separate-confinement-heterostructure semiconductor; single quantum; implanted region; planar-buried-heterostructure diode; ion-implanted planar-buried-heterostructure; /438/148/

Citation Formats

Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Method of making an ion-implanted planar-buried-heterostructure diode laser. United States: N. p., 1992. Web.
Brennan, Thomas M, Hammons, Burrell E, Myers, David R, & Vawter, Gregory A. Method of making an ion-implanted planar-buried-heterostructure diode laser. United States.
Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Wed . "Method of making an ion-implanted planar-buried-heterostructure diode laser". United States. https://www.osti.gov/servlets/purl/868227.
@article{osti_868227,
title = {Method of making an ion-implanted planar-buried-heterostructure diode laser},
author = {Brennan, Thomas M and Hammons, Burrell E and Myers, David R and Vawter, Gregory A},
abstractNote = {Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Patent:

Save / Share: