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Title: Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

Abstract

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Chestnut Hill, MA)
  2. (Arlington, MA)
  3. (Bedford, MA)
  4. (Framingham, MA)
Issue Date:
Research Org.:
Solar Energy Research Institute
OSTI Identifier:
868176
Patent Number(s):
5091333
Application Number:
07/241,506
Assignee:
Massachusetts Institute of Technology (Cambridge, MA) OSTI
DOE Contract Number:  
XZ-0-9158-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reducing; dislocations; semiconductors; utilizing; repeated; thermal; cycling; multistage; epitaxial; growth; dislocation; densities; reduced; growing; vapor; phase; employing; technique; interrupting; cooling; layer; deposited; repeating; process; quality; active; top; achieved; method; interrupted; coupled; permits; trapped; initial; stages; top layer; thermal cycling; vapor phase; epitaxial growth; repeated thermal; semiconductors utilizing; reducing dislocations; multistage epitaxial; utilizing repeated; growing semiconductors; initial stage; interrupting growth; dislocation densities; /117/136/148/257/438/

Citation Formats

Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P., and Davis, Frances M. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth. United States: N. p., 1992. Web.
Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P., & Davis, Frances M. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth. United States.
Fan, John C. C., Tsaur, Bor-Yeu, Gale, Ronald P., and Davis, Frances M. Tue . "Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth". United States. https://www.osti.gov/servlets/purl/868176.
@article{osti_868176,
title = {Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth},
author = {Fan, John C. C. and Tsaur, Bor-Yeu and Gale, Ronald P. and Davis, Frances M.},
abstractNote = {Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {2}
}

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