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Title: Hot filament CVD of boron nitride films

Abstract

Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
868116
Patent Number(s):
5079038
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC04-76
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
hot; filament; cvd; boron; nitride; films; apprxeq; 1400; degree; activate; borazine; molecules; subsequent; reaction; direct; line-of-sight; substrate; transparent; ntiride; thick; 25; 000; angstroms; grown; temperature; 100; minimum; determined; radiative; heating; adjacent; bn; indication; crystallinity; x-ray; diffraction; xrd; photoelectron; spectra; xps; ratio; 97; detectable; impurities; level; raman; infrared; spectroscopy; characteristic; h-bn; amounts; hydrogen; detected; n-h; b-h; bands; spectrum; feature; method; separation; localization; thermal; activation; step; surface; film; growth; steps; allows; radiative heat; temperature thermal; nitride film; x-ray diffraction; film growth; boron nitride; substrate surface; hot filament; substrate temperature; x-ray photoelectron; activation step; nitride films; surface reaction; subsequent reaction; rate temperature; temperature bn; /427/

Citation Formats

Rye, Robert R. Hot filament CVD of boron nitride films. United States: N. p., 1992. Web.
Rye, Robert R. Hot filament CVD of boron nitride films. United States.
Rye, Robert R. Wed . "Hot filament CVD of boron nitride films". United States. https://www.osti.gov/servlets/purl/868116.
@article{osti_868116,
title = {Hot filament CVD of boron nitride films},
author = {Rye, Robert R},
abstractNote = {Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

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