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Title: I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

Abstract

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Inventors:
 [1];  [1]
  1. (Seattle, WA)
Issue Date:
OSTI Identifier:
868111
Patent Number(s):
5078804
Application Number:
07/569,411
Assignee:
Boeing Company (Seattle, WA) OSTI
DOE Contract Number:  
ZL-8-06031-8
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
i-iii-vi; based; solar; cell; utilizing; structure; cuingase; cdzns; zno; film; layer; copper; indium; gallium; selenide; cadmium; zinc; sulfide; double; oxide; metallization; comprised; nickel; covered; aluminum; optional; antireflective; coating; placed; deposited; means; aqueous; solution; growth; deposition; process; consist; layers; content; photovoltaic; efficiencies; 12; air; mass; illumination; conditions; 10; achieved; zinc sulfide; antireflective coating; indium gallium; reflective coating; cell utilizing; air mass; zinc oxide; solar cell; aqueous solution; deposition process; double layer; copper indium; cadmium zinc; solution growth; sulfide layer; based solar; /136/257/438/

Citation Formats

Chen, Wen S., and Stewart, John M. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO. United States: N. p., 1992. Web.
Chen, Wen S., & Stewart, John M. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO. United States.
Chen, Wen S., and Stewart, John M. Tue . "I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO". United States. https://www.osti.gov/servlets/purl/868111.
@article{osti_868111,
title = {I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO},
author = {Chen, Wen S. and Stewart, John M.},
abstractNote = {A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1992},
month = {1}
}

Patent:

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