I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO
Abstract
A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.
- Inventors:
-
- Seattle, WA
- Issue Date:
- OSTI Identifier:
- 868111
- Patent Number(s):
- 5078804
- Application Number:
- 07/569,411
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- ZL-8-06031-8
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- i-iii-vi; based; solar; cell; utilizing; structure; cuingase; cdzns; zno; film; layer; copper; indium; gallium; selenide; cadmium; zinc; sulfide; double; oxide; metallization; comprised; nickel; covered; aluminum; optional; antireflective; coating; placed; deposited; means; aqueous; solution; growth; deposition; process; consist; layers; content; photovoltaic; efficiencies; 12; air; mass; illumination; conditions; 10; achieved; zinc sulfide; antireflective coating; indium gallium; reflective coating; cell utilizing; air mass; zinc oxide; solar cell; aqueous solution; deposition process; double layer; copper indium; cadmium zinc; solution growth; sulfide layer; based solar; /136/257/438/
Citation Formats
Chen, Wen S, and Stewart, John M. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO. United States: N. p., 1992.
Web.
Chen, Wen S, & Stewart, John M. I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO. United States.
Chen, Wen S, and Stewart, John M. Wed .
"I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO". United States. https://www.osti.gov/servlets/purl/868111.
@article{osti_868111,
title = {I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO},
author = {Chen, Wen S and Stewart, John M},
abstractNote = {A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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Works referenced in this record:
Electroless deposition of semiconductor films
journal, June 1979
- Sharma, N. C.; Kainthla, R. C.; Pandya, D. K.
- Thin Solid Films, Vol. 60, Issue 1