X-ray lithography source

Piestrup, Melvin A; Boyers, David G; Pincus, Cary

Title: X-ray lithography source

Full Record
Other Related Research

Abstract

A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.

Inventors:

Piestrup, Melvin A ^[1]; Boyers, David G ^[2]; Pincus, Cary ^[3]

Woodside, CA
Mountain View, CA
Sunnyvale, CA

Issue Date:: 1991-01-01

Research Org.:: Adelphia Technology Inc

OSTI Identifier:: 868109

Patent Number(s):: 5077774

Assignee:: Adelphi Technology Inc. (Palo Alto, CA)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

G - PHYSICS G21 - NUCLEAR PHYSICS G21K - TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR

Show more

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70033 - {by plasma EUV sources

G - PHYSICS G21 - NUCLEAR PHYSICS G21K - TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR
G21K1/06 - using diffraction, refraction or reflection, e.g. monochromators
G21K2201/064 - having a curved surface
G21K5/08 - Holders for targets or for other objects to be irradiated

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J35/00 - X-ray tubes

Show less

DOE Contract Number:: AC03-85ER80234

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: x-ray; lithography; source; high-intensity; inexpensive; production; integrated; circuits; foil; stacks; bombarded; high-energy; electron; beam; 25; 250; mev; produce; flux; soft; x-rays; 500; kev; methods; increasing; total; power; section; uniform; described; obtaining; desired; x-ray-beam; field; size; optimum; frequency; spectrum; elminating; neutron; method; plurality; station; operation; makes; process; efficient; economical; satisfying; issues; transition; radiation; exellent; moderate-priced; x-ray lithography; x-ray source; x-ray beam; electron beam; neutron flux; integrated circuits; integrated circuit; soft x-ray; energy electron; frequency spectrum; transition radiation; soft x-rays; high-energy electron; inexpensive x-ray; desired x-ray; /378/

Citation Formats


                    Piestrup, Melvin A, Boyers, David G, and Pincus, Cary. X-ray lithography source.  United States: N. p., 1991. 
        Web.

Copy to clipboard


                    Piestrup, Melvin A, Boyers, David G, & Pincus, Cary. X-ray lithography source.  United States.

Copy to clipboard


                    Piestrup, Melvin A, Boyers, David G, and Pincus, Cary. Tue .  
        "X-ray lithography source".  United States.  https://www.osti.gov/servlets/purl/868109.

Copy to clipboard


                    
@article{osti_868109,

  title        = {X-ray lithography source},

  author       = {Piestrup, Melvin A and Boyers, David G and Pincus, Cary},

  abstractNote = {A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Objective for EUV microscopy, EUV lithography, and x-ray imaging

Patent Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concavemore » « less
Full Text Available
X-ray lithography using holographic images

Patent Howells, Malcolm S [Berkeley, CA]; Jacobsen, Chris [Sound Beach, NY]

Methods for forming X-ray images having 0.25 .mu.m minimum line widths on X-ray sensitive material are presented. A holgraphic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation formore » « less
Full Text Available
Critical illumination condenser for x-ray lithography

Patent Cohen, Simon J [Pleasanton, CA]; Seppala, Lynn G [Livermore, CA]

A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times..more » « less
Full Text Available
Vitreous carbon mask substrate for X-ray lithography

Patent Aigeldinger, Georg [Livermore, CA]; Skala, Dawn M [Fremont, CA]; Griffiths, Stewart K [Livermore, CA]; ...

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGAmore » « less
Full Text Available
X-ray lithography using holographic images

Patent Howells, Malcolm R [Berkeley, CA]; Jacobsen, Chris [Sound Beach, NY]

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, fluxmore » « less
Full Text Available

Similar Records