X-ray lithography source
Abstract
A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.
- Inventors:
-
- Woodside, CA
- Mountain View, CA
- Sunnyvale, CA
- Issue Date:
- Research Org.:
- Adelphia Technology Inc
- OSTI Identifier:
- 868109
- Patent Number(s):
- 5077774
- Assignee:
- Adelphi Technology Inc. (Palo Alto, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G - PHYSICS G21 - NUCLEAR PHYSICS G21K - TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR
- DOE Contract Number:
- AC03-85ER80234
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- x-ray; lithography; source; high-intensity; inexpensive; production; integrated; circuits; foil; stacks; bombarded; high-energy; electron; beam; 25; 250; mev; produce; flux; soft; x-rays; 500; kev; methods; increasing; total; power; section; uniform; described; obtaining; desired; x-ray-beam; field; size; optimum; frequency; spectrum; elminating; neutron; method; plurality; station; operation; makes; process; efficient; economical; satisfying; issues; transition; radiation; exellent; moderate-priced; x-ray lithography; x-ray source; x-ray beam; electron beam; neutron flux; integrated circuits; integrated circuit; soft x-ray; energy electron; frequency spectrum; transition radiation; soft x-rays; high-energy electron; inexpensive x-ray; desired x-ray; /378/
Citation Formats
Piestrup, Melvin A, Boyers, David G, and Pincus, Cary. X-ray lithography source. United States: N. p., 1991.
Web.
Piestrup, Melvin A, Boyers, David G, & Pincus, Cary. X-ray lithography source. United States.
Piestrup, Melvin A, Boyers, David G, and Pincus, Cary. Tue .
"X-ray lithography source". United States. https://www.osti.gov/servlets/purl/868109.
@article{osti_868109,
title = {X-ray lithography source},
author = {Piestrup, Melvin A and Boyers, David G and Pincus, Cary},
abstractNote = {A high-intensity, inexpensive X-ray source for X-ray lithography for the production of integrated circuits. Foil stacks are bombarded with a high-energy electron beam of 25 to 250 MeV to produce a flux of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray-beam field size, optimum frequency spectrum and elminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an exellent moderate-priced X-ray source for lithography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}
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