Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

Martinez, Robert J; Rye, Robert R

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

Full Record
Other Related Research

Abstract

A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.

Inventors:

Martinez, Robert J ^[1]; Rye, Robert R ^[1]

Albuquerque, NM

Issue Date:: 1991-01-01

Research Org.:: AT&T

OSTI Identifier:: 868069

Patent Number(s):: 5066565

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS

Show more

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/2059 - {using a scanning corpuscular radiation beam, e.g. an electron beam}

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
H05K1/034 - {containing halogen}
H05K3/0017 - {Etching of the substrate by chemical or physical means}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S430/167 - X-ray
Y10S430/168 - X-ray exposure process

Show less

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: selective; protection; poly; tetra-fluoroethylene; effects; chemical; etching; photolithographic; method; treating; article; formed; polymeric; material; comprises; subjecting; portions; surface; ionizing; radiation; treatment; according; minimizes; effect; subseuent; easily; provided; particular; applicability; articles; fluorocarbons; ptfe; employed; comprise; mg; alpha; x-rays; lower-energy; electrons; energy electrons; chemical etching; polymeric material; ionizing radiation; material comprises; energy electron; polymeric article; articles formed; comprises subjecting; /430/216/

Citation Formats


                    Martinez, Robert J, and Rye, Robert R. Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching.  United States: N. p., 1991. 
        Web.

Copy to clipboard


                    Martinez, Robert J, & Rye, Robert R. Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching.  United States.

Copy to clipboard


                    Martinez, Robert J, and Rye, Robert R. Tue .  
        "Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching".  United States.  https://www.osti.gov/servlets/purl/868069.

Copy to clipboard


                    
@article{osti_868069,

  title        = {Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching},

  author       = {Martinez, Robert J and Rye, Robert R},

  abstractNote = {A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Method for protecting chip corners in wet chemical etching of wafers

Patent Hui, Wing C [Campbell, CA]

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful formore » « less
Full Text Available
ScAIN etch mask for highly selective etching

Patent Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etchmore » « less
Full Text Available
Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

Patent Ashby, Carol I. H. [Edgewood, NM]; Myers, David R [Albuquerque, NM]

The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentrationmore » « less
Full Text Available
Encapsulants for protecting MEMS devices during post-packaging release etch

Patent Peterson, Kenneth A.

The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a "package first, release later" manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.
Full Text Available
Conductivity based on selective etch for GaN devices and applications thereof

Patent Zhang, Yu; Sun, Qian; Han, Jung

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
Full Text Available

Similar Records