Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

Martinez, Robert J; Rye, Robert R

Title: Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching

Full Record
Other Related Research

Abstract

A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.

Inventors:

Martinez, Robert J ^[1]; Rye, Robert R ^[1]

Albuquerque, NM

Issue Date:: 1991-01-01

Research Org.:: AT&T

OSTI Identifier:: 868069

Patent Number(s):: 5066565

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS

Show more

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/2059 - {using a scanning corpuscular radiation beam, e.g. an electron beam}

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
H05K3/0017 - {Etching of the substrate by chemical or physical means}
H05K1/034 - {containing halogen}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S430/167 - X-ray
Y10S430/168 - X-ray exposure process

Show less

DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: selective; protection; poly; tetra-fluoroethylene; effects; chemical; etching; photolithographic; method; treating; article; formed; polymeric; material; comprises; subjecting; portions; surface; ionizing; radiation; treatment; according; minimizes; effect; subseuent; easily; provided; particular; applicability; articles; fluorocarbons; ptfe; employed; comprise; mg; alpha; x-rays; lower-energy; electrons; energy electrons; chemical etching; polymeric material; ionizing radiation; material comprises; energy electron; polymeric article; articles formed; comprises subjecting; /430/216/

Citation Formats


                    Martinez, Robert J, and Rye, Robert R. Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching.  United States: N. p., 1991. 
        Web.

Copy to clipboard


                    Martinez, Robert J, & Rye, Robert R. Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching.  United States.

Copy to clipboard


                    Martinez, Robert J, and Rye, Robert R. Tue .  
        "Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching".  United States.  https://www.osti.gov/servlets/purl/868069.

Copy to clipboard


                    
@article{osti_868069,

  title        = {Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching},

  author       = {Martinez, Robert J and Rye, Robert R},

  abstractNote = {A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(k.alpha.) X-rays or lower-energy electrons.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Method for protecting chip corners in wet chemical etching of wafers

Patent Hui, Wing C [Campbell, CA]

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful formore » « less
Full Text Available
ScAIN etch mask for highly selective etching

Patent Henry, Michael David; Young, Travis Ryan; Douglas, Erica Ann

A fabrication process employing the use of ScAlN as an etch mask is disclosed. The ScAlN etch mask is chemically nonvolatile in fluorine-based etch chemistries and has a low sputter yield, resulting in greater etch mask selectivity and reduced surface roughness for silicon and other semiconductor materials. The ScAlN etch mask has an etch mask selectivity of greater than 200,000:1 relative to silicon compared to an etch mask selectivity of less than 40,000:1 for a prior art AlN etch mask relative to silicon. Further, due to reduced sputtering of the ScAlN etch mask, and thus reduced micromasking, the ScAlN etchmore » « less
Full Text Available
Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

Patent Ashby, Carol I. H. [Edgewood, NM]; Myers, David R [Albuquerque, NM]

The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentrationmore » « less
Full Text Available
Chemical conversion coating for protecting magnesium alloys from corrosion

Patent Bhargava, Gaurang; Allen, Fred M.; Skandan, Ganesh; ...

A chromate-free, self-healing conversion coating solution for magnesium alloy substrates, composed of 10-20 wt. % Mg(NO.sub.3).sub.2.6H.sub.2O, 1-5 wt. % Al(NO.sub.3).sub.3.9H.sub.2O, and less than 1 wt. % of [V.sub.10O.sub.28].sup.6- or VO.sub.3.sup.- dissolved in water. The corrosion resistance offered by the resulting coating is in several hundreds of hours in salt-spray testing. This prolonged corrosion protection is attributed to the creation of a unique structure and morphology of the conversion coating that serves as a barrier coating with self-healing properties. Hydroxoaluminates form the backbone of the barrier protection offered while the magnesium hydroxide domains facilitate the "slow release" of vanadium compounds asmore » « less
Full Text Available
Encapsulants for protecting MEMS devices during post-packaging release etch

Patent Peterson, Kenneth A.

The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a "package first, release later" manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.
Full Text Available

Similar Records