Ion-implanted planar-buried-heterostructure diode laser

Brennan, Thomas M; Hammons, Burrell E; Myers, David R; Vawter, Gregory A

Title: Ion-implanted planar-buried-heterostructure diode laser

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Abstract

A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

Inventors:

Brennan, Thomas M ^[1]; Hammons, Burrell E ^[2]; Myers, David R ^[1]; Vawter, Gregory A ^[1]

Albuquerque, NM
Tijeras, NM

Issue Date:: 1991-01-01

Research Org.:: AT&T

OSTI Identifier:: 867985

Patent Number(s):: 5048038

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/20 - Structure or shape of the semiconductor body to guide the optical wave {
H01S5/2059 - {by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion}
H01S5/227 - Buried mesa structure {
H01S5/2275 - {mesa created by etching}
H01S5/3211 - {characterised by special cladding layers, e.g. details on band-discontinuities}
H01S5/3215 - {graded composition cladding layers}
H01S5/3409 - {special GRINSCH structures}
H01S5/3428 - {layer orientation perpendicular to the substrate}

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DOE Contract Number:: AC04-76DP00789

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: ion-implanted; planar-buried-heterostructure; diode; laser; graded-index; separate-confinement-heterostructure; semiconductor; 10; single; quantum; multi-quantum; active; stripe; 12; disposed; p-type; compositionally; graded; iii-v; cladding; layer; 14; n-type; 16; implanted; region; 28; 26; regions; defining; lateral; extent; compositionally graded; diode laser; p-type region; n-type region; semiconductor diode; cladding layer; active stripe; lateral extent; separate-confinement-heterostructure semiconductor; single quantum; implanted region; planar-buried-heterostructure diode; ion-implanted planar-buried-heterostructure; /372/

Citation Formats


                    Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Ion-implanted planar-buried-heterostructure diode laser.  United States: N. p., 1991. 
        Web.

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                    Brennan, Thomas M, Hammons, Burrell E, Myers, David R, & Vawter, Gregory A. Ion-implanted planar-buried-heterostructure diode laser.  United States.

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                    Brennan, Thomas M, Hammons, Burrell E, Myers, David R, and Vawter, Gregory A. Tue .  
        "Ion-implanted planar-buried-heterostructure diode laser".  United States.  https://www.osti.gov/servlets/purl/867985.

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@article{osti_867985,

  title        = {Ion-implanted planar-buried-heterostructure diode laser},

  author       = {Brennan, Thomas M and Hammons, Burrell E and Myers, David R and Vawter, Gregory A},

  abstractNote = {A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

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