Method for preparing homogeneous single crystal ternary III-V alloys
Abstract
A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.
- Inventors:
-
- Evergreen, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 867974
- Patent Number(s):
- 5047112
- Assignee:
- United States of America as represented by United States (Washington, DC)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; preparing; homogeneous; single; crystal; ternary; iii-v; alloys; producing; single-crystal; perfection; floating; crucible; outer; holds; alloy; composition; desired; produced; inner; narrow; melt-passing; channel; bottom; wall; quantity; melt; pseudo-binary; liquidus; freeze; crucilbe; maintained; predetermined; temperature; pulled; flows; rate; corresponds; growth; bottom wall; ternary alloy; single crystal; iii-v alloy; ternary iii-v; ternary alloys; producing homogeneous; crystal ternary; /117/
Citation Formats
Ciszek, Theodore F. Method for preparing homogeneous single crystal ternary III-V alloys. United States: N. p., 1991.
Web.
Ciszek, Theodore F. Method for preparing homogeneous single crystal ternary III-V alloys. United States.
Ciszek, Theodore F. Tue .
"Method for preparing homogeneous single crystal ternary III-V alloys". United States. https://www.osti.gov/servlets/purl/867974.
@article{osti_867974,
title = {Method for preparing homogeneous single crystal ternary III-V alloys},
author = {Ciszek, Theodore F},
abstractNote = {A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}