skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for preparing homogeneous single crystal ternary III-V alloys

Abstract

A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

Inventors:
 [1]
  1. Evergreen, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
867974
Patent Number(s):
5047112
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; homogeneous; single; crystal; ternary; iii-v; alloys; producing; single-crystal; perfection; floating; crucible; outer; holds; alloy; composition; desired; produced; inner; narrow; melt-passing; channel; bottom; wall; quantity; melt; pseudo-binary; liquidus; freeze; crucilbe; maintained; predetermined; temperature; pulled; flows; rate; corresponds; growth; bottom wall; ternary alloy; single crystal; iii-v alloy; ternary iii-v; ternary alloys; producing homogeneous; crystal ternary; /117/

Citation Formats

Ciszek, Theodore F. Method for preparing homogeneous single crystal ternary III-V alloys. United States: N. p., 1991. Web.
Ciszek, Theodore F. Method for preparing homogeneous single crystal ternary III-V alloys. United States.
Ciszek, Theodore F. Tue . "Method for preparing homogeneous single crystal ternary III-V alloys". United States. https://www.osti.gov/servlets/purl/867974.
@article{osti_867974,
title = {Method for preparing homogeneous single crystal ternary III-V alloys},
author = {Ciszek, Theodore F},
abstractNote = {A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

Save / Share: