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Title: SLS complementary logic devices with increase carrier mobility

Abstract

In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
867902
Patent Number(s):
5031007
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
sls; complementary; logic; devices; increase; carrier; mobility; electronic; device; comprising; semiconductor; material; performance; characteristic; limited; holes; valence; band; degeneracy; high-mobility; low-mobility; energy; levels; accessible; energy-momentum; space; maximum; improvement; provided; strained; layer; superlattice; compositions; thicknesses; selected; strain; layers; predominantly; containing; type; splits; modifies; manner; whereby; limitation; alleviated; energy level; semiconductor material; device comprising; strained layer; energy levels; layer thickness; valence band; electronic device; performance characteristic; layer superlattice; layer composition; manner whereby; logic devices; /257/

Citation Formats

Chaffin, Roger J, Osbourn, Gordon C, and Zipperian, Thomas E. SLS complementary logic devices with increase carrier mobility. United States: N. p., 1991. Web.
Chaffin, Roger J, Osbourn, Gordon C, & Zipperian, Thomas E. SLS complementary logic devices with increase carrier mobility. United States.
Chaffin, Roger J, Osbourn, Gordon C, and Zipperian, Thomas E. Tue . "SLS complementary logic devices with increase carrier mobility". United States. https://www.osti.gov/servlets/purl/867902.
@article{osti_867902,
title = {SLS complementary logic devices with increase carrier mobility},
author = {Chaffin, Roger J and Osbourn, Gordon C and Zipperian, Thomas E},
abstractNote = {In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

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