SLS complementary logic devices with increase carrier mobility
Abstract
In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 867902
- Patent Number(s):
- 5031007
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- sls; complementary; logic; devices; increase; carrier; mobility; electronic; device; comprising; semiconductor; material; performance; characteristic; limited; holes; valence; band; degeneracy; high-mobility; low-mobility; energy; levels; accessible; energy-momentum; space; maximum; improvement; provided; strained; layer; superlattice; compositions; thicknesses; selected; strain; layers; predominantly; containing; type; splits; modifies; manner; whereby; limitation; alleviated; energy level; semiconductor material; device comprising; strained layer; energy levels; layer thickness; valence band; electronic device; performance characteristic; layer superlattice; layer composition; manner whereby; logic devices; /257/
Citation Formats
Chaffin, Roger J, Osbourn, Gordon C, and Zipperian, Thomas E. SLS complementary logic devices with increase carrier mobility. United States: N. p., 1991.
Web.
Chaffin, Roger J, Osbourn, Gordon C, & Zipperian, Thomas E. SLS complementary logic devices with increase carrier mobility. United States.
Chaffin, Roger J, Osbourn, Gordon C, and Zipperian, Thomas E. Tue .
"SLS complementary logic devices with increase carrier mobility". United States. https://www.osti.gov/servlets/purl/867902.
@article{osti_867902,
title = {SLS complementary logic devices with increase carrier mobility},
author = {Chaffin, Roger J and Osbourn, Gordon C and Zipperian, Thomas E},
abstractNote = {In an electronic device comprising a semiconductor material and having at least one performance characteristic which is limited by the mobility of holes in the semiconductor material, said mobility being limited because of a valence band degeneracy among high-mobility and low-mobility energy levels accessible to said holes at the energy-momentum space maximum, an improvement is provided wherein the semiconductor material is a strained layer superlattice (SLS) whose layer compositions and layer thicknesses are selected so that the strain on the layers predominantly containing said at least one carrier type splits said degeneracy and modifies said energy levels around said energy-momentum space maximum in a manner whereby said limitation on the mobility of said holes is alleviated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}