Group I-III-VI.sub.2 semiconductor films for solar cell application
Abstract
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.
- Inventors:
-
- Redondo Beach, CA
- Northridge, CA
- Issue Date:
- OSTI Identifier:
- 867891
- Patent Number(s):
- 5028274
- Assignee:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- SERI-XL-7-06031-6
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- i-iii-vi; semiconductor; films; solar; cell; application; relates; improved; film; excellent; electrical; mechanical; integrity; device; comprises; substrate; absorber; layer; transparent; window; bond; enhanced; intermediate; grown; contains; tellurium; substitutes; pb; improves; morphology; characteristics; semiconductor film; transparent window; film solar; window layer; device comprises; solar cell; semiconductor layer; intermediate layer; electrical characteristics; absorber layer; semiconductor films; mechanical bond; mechanical integrity; electrical characteristic; excellent electrical; cell application; /136/427/438/
Citation Formats
Basol, Bulent M, and Kapur, Vijay K. Group I-III-VI.sub.2 semiconductor films for solar cell application. United States: N. p., 1991.
Web.
Basol, Bulent M, & Kapur, Vijay K. Group I-III-VI.sub.2 semiconductor films for solar cell application. United States.
Basol, Bulent M, and Kapur, Vijay K. Tue .
"Group I-III-VI.sub.2 semiconductor films for solar cell application". United States. https://www.osti.gov/servlets/purl/867891.
@article{osti_867891,
title = {Group I-III-VI.sub.2 semiconductor films for solar cell application},
author = {Basol, Bulent M and Kapur, Vijay K},
abstractNote = {This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}
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