Etching process for improving the strength of a laser-machined silicon-based ceramic article

Title: Etching process for improving the strength of a laser-machined silicon-based ceramic article

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Abstract

A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

Inventors:

Copley, Stephen M ^[1]; Tao, Hongyi ^[2]; Todd-Copley, Judith A ^[1]

Palos Verdes, CA
Covina, CA

Issue Date:: 1991-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

OSTI Identifier:: 867862

Patent Number(s):: 5022957

Assignee:: University of Southern California (Los Angeles, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B41/0036 - {Laser treatment
C04B41/009 - {characterised by the material treated}
C04B41/5353 - {Wet etching, e.g. with etchants dissolved in organic solvents}
C04B35/584 - based on silicon nitride
C04B41/91 - involving the removal of part of the materials of the treated articles, e.g. etching

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DOE Contract Number:: AC05-84OR21400

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: etching; process; improving; strength; laser-machined; silicon-based; ceramic; article; articles; formed; material; silicon; nitride; surface; immersed; solution; hydrofluoric; acid; nitric; duration; sufficient; remove; substantially; film; residue; insufficient; allow; unduly; attack; grain; boundaries; underlying; substrate; effectively; removes; source; cracks; otherwise; propagate; downwardly; significantly; reduce; significantly reduce; silicon film; hydrofluoric acid; remove substantially; ceramic article; etching process; ceramic material; grain boundaries; silicon nitride; nitric acid; effectively removes; articles formed; based ceramic; silicon-based ceramic; move substantially; ceramic mater; machined surface; effectively remove; /216/65/134/252/

Citation Formats


                    Copley, Stephen M, Tao, Hongyi, and Todd-Copley, Judith A. Etching process for improving the strength of a laser-machined silicon-based ceramic article.  United States: N. p., 1991. 
        Web.

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                    Copley, Stephen M, Tao, Hongyi, & Todd-Copley, Judith A. Etching process for improving the strength of a laser-machined silicon-based ceramic article.  United States.

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                    Copley, Stephen M, Tao, Hongyi, and Todd-Copley, Judith A. Tue .  
        "Etching process for improving the strength of a laser-machined silicon-based ceramic article".  United States.  https://www.osti.gov/servlets/purl/867862.

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@article{osti_867862,

  title        = {Etching process for improving the strength of a laser-machined silicon-based ceramic article},

  author       = {Copley, Stephen M and Tao, Hongyi and Todd-Copley, Judith A},

  abstractNote = {A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1991},

  month        = {1}

}

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