Long-laser-pulse method of producing thin films
Abstract
A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.
- Inventors:
-
- Berkeley, CA
- Walnut Creek, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 867837
- Patent Number(s):
- 5019552
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- long-laser-pulse; method; producing; films; depositing; means; laser; vaporization; employs; long-pulse; nd-glass; millisecond; duration; peak; power; density; typically; range; 10; -10; cm; produce; superconducting; perovskite; material; embodiment; hundred; nanometers; thick; film; yba; cu; 7-x; produced; srtio; crystal; substrate; pulses; situ-recrystallization; post-annealing; elevated; temperature; presence; oxidizing; agen; described; arose; course; contract; de-c03-76sf0098; united; department; energy; university; california; superconducting film; thick film; elevated temperature; power density; peak power; superconducting films; conducting films; crystal substrate; conducting film; oxidizing agen; pulse laser; laser vaporization; /505/427/
Citation Formats
Balooch, Mehdi, Olander, Donald K, and Russo, Richard E. Long-laser-pulse method of producing thin films. United States: N. p., 1991.
Web.
Balooch, Mehdi, Olander, Donald K, & Russo, Richard E. Long-laser-pulse method of producing thin films. United States.
Balooch, Mehdi, Olander, Donald K, and Russo, Richard E. Tue .
"Long-laser-pulse method of producing thin films". United States. https://www.osti.gov/servlets/purl/867837.
@article{osti_867837,
title = {Long-laser-pulse method of producing thin films},
author = {Balooch, Mehdi and Olander, Donald K and Russo, Richard E},
abstractNote = {A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}