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Title: Stand-off transmission lines and method for making same

Abstract

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress.

Inventors:
 [1]
  1. Livermore, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
867827
Patent Number(s):
5017509
Assignee:
Regents of University of California (Oakland, CA)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
stand-off; transmission; lines; method; standoff; integrated; circuit; structure; formed; etching; removing; portion; dielectric; layer; separating; microstrip; metal; ground; plane; regions; fabricated; subtractive; process; additive; direct; laser; writing; fine; followed; plating; trench; etched; nucleation; wire; electrolytically; deposited; supported; freestanding; posts; material; surrounded; air; gaps; produced; average; constant; reduced; resulting; characteristic; impedance; crosstalk; increased; signal; propagation; velocities; wafer; stress; additive process; ground plane; air gap; dielectric constant; transmission lines; dielectric layer; metal layer; transmission line; integrated circuit; dielectric material; characteristic impedance; propagation velocities; metal lines; air gaps; strip line; strip metal; circuit structure; direct laser; material surround; material surrounded; metal line; laser writing; /438/

Citation Formats

Tuckerman, David B. Stand-off transmission lines and method for making same. United States: N. p., 1991. Web.
Tuckerman, David B. Stand-off transmission lines and method for making same. United States.
Tuckerman, David B. Tue . "Stand-off transmission lines and method for making same". United States. https://www.osti.gov/servlets/purl/867827.
@article{osti_867827,
title = {Stand-off transmission lines and method for making same},
author = {Tuckerman, David B},
abstractNote = {Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

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