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Title: Method of bonding single crystal quartz by field-assisted bonding

Abstract

The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

Inventors:
 [1];  [2];  [3]
  1. Tijeras, NM
  2. Edgewood, NM
  3. Albuquerque, NM
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
867784
Patent Number(s):
5009690
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; bonding; single; crystal; quartz; field-assisted; producing; hermetic; stable; structural; bond; crystals; providing; depositing; films; borosilicate; glass; silicon; portions; respectively; juxtaposed; surface; contact; relationship; heated; temperature; period; sufficient; electrically; conductive; electrical; potential; applied; creating; electrostatic; field; adjoining; surfaces; causing; attracted; intimate; form; joining; silicon films; silicon film; period sufficient; electrical potential; electrically conductive; single crystal; intimate contact; quartz crystal; electrostatic field; silicate glass; surface contact; borosilicate glass; quartz crystals; crystal quartz; /65/

Citation Formats

Curlee, Richard M, Tuthill, Clinton D, and Watkins, Randall D. Method of bonding single crystal quartz by field-assisted bonding. United States: N. p., 1991. Web.
Curlee, Richard M, Tuthill, Clinton D, & Watkins, Randall D. Method of bonding single crystal quartz by field-assisted bonding. United States.
Curlee, Richard M, Tuthill, Clinton D, and Watkins, Randall D. Tue . "Method of bonding single crystal quartz by field-assisted bonding". United States. https://www.osti.gov/servlets/purl/867784.
@article{osti_867784,
title = {Method of bonding single crystal quartz by field-assisted bonding},
author = {Curlee, Richard M and Tuthill, Clinton D and Watkins, Randall D},
abstractNote = {The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}

Patent:

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