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Title: Soft x-ray reduction camera for submicron lithography

Abstract

Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

Inventors:
 [1];  [2]
  1. 2708 Rembrandt Pl., Modesto, CA 95356
  2. 7911 Mines Rd., Livermore, CA 94550
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
OSTI Identifier:
867756
Patent Number(s):
5003567
Assignee:
Hawryluk, Andrew M. (2708 Rembrandt Pl., Modesto, CA 95356);Seppala, Lynn G. (7911 Mines Rd., Livermore, CA 94550)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
soft; x-ray; reduction; camera; submicron; lithography; projection; performed; optical; components; spherical; imaging; lenses; mirrors; form; capable; projecting; 5x; demagnified; image; mask; resist; coated; wafer; nm; radiation; diffraction; limited; resolution; design; 135; depth; field; microns; view; cm; reflecting; masks; patterned; multilayer; fabricated; thick; substrates; relatively; distortion; free; laser; produced; plasma; source; larger; varying; optic; figures; characteristics; laser produced; projection lithography; optical components; soft x-ray; diffraction limited; nm radiation; x-ray reduction; x-ray multilayer; coated wafer; reduction camera; multilayer mirror; resist coated; optical component; distortion free; x-ray optical; x-ray projection; imaging lenses; imaging lens; produced plasma; /378/

Citation Formats

Hawryluk, Andrew M, and Seppala, Lynn G. Soft x-ray reduction camera for submicron lithography. United States: N. p., 1991. Web.
Hawryluk, Andrew M, & Seppala, Lynn G. Soft x-ray reduction camera for submicron lithography. United States.
Hawryluk, Andrew M, and Seppala, Lynn G. Tue . "Soft x-ray reduction camera for submicron lithography". United States. https://www.osti.gov/servlets/purl/867756.
@article{osti_867756,
title = {Soft x-ray reduction camera for submicron lithography},
author = {Hawryluk, Andrew M and Seppala, Lynn G},
abstractNote = {Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}