Integrated injection-locked semiconductor diode laser
Abstract
A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 867716
- Patent Number(s):
- 4995047
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- integrated; injection-locked; semiconductor; diode; laser; continuous; wave; high-power; array; provided; on-chip; independently-controlled; master; injection; locked; capable; lasing; single; near-diffraction; limited; output; beam; single-facet; power; levels; 125; mw; 250; total; electronic; steering; emission; angle; degrees; obtained; varying; current; injects; slave; reflection; rear; facet; master laser; power levels; continuous wave; power level; output beam; laser beam; diode laser; diffraction limited; semiconductor diode; injection locked; laser array; high-power diode; integrated injection-locked; /372/
Citation Formats
Hadley, G Ronald, Hohimer, John P, and Owyoung, Adelbert. Integrated injection-locked semiconductor diode laser. United States: N. p., 1991.
Web.
Hadley, G Ronald, Hohimer, John P, & Owyoung, Adelbert. Integrated injection-locked semiconductor diode laser. United States.
Hadley, G Ronald, Hohimer, John P, and Owyoung, Adelbert. Tue .
"Integrated injection-locked semiconductor diode laser". United States. https://www.osti.gov/servlets/purl/867716.
@article{osti_867716,
title = {Integrated injection-locked semiconductor diode laser},
author = {Hadley, G Ronald and Hohimer, John P and Owyoung, Adelbert},
abstractNote = {A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}
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