Thin-film chip-to-substrate interconnect and methods for making same
Abstract
Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 867707
- Patent Number(s):
- 4992847
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05K - PRINTED CIRCUITS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thin-film; chip-to-substrate; interconnect; methods; integrated; circuit; chips; electrically; connected; silica; wafer; interconnection; substrate; film; wiring; fabricated; bevelled; edges; subtractive; wire; fabrication; method; series; masks; etching; steps; form; wires; metal; layer; additive; direct; laser; writes; deposits; lines; plated; quasi-additive; forms; pattern; trenches; expose; surface; nucleate; subsequent; electrolytic; deposition; inductance; interconnections; 25; micron; pitch; 1600; cm; square; chip; produced; hybrid; eliminates; solder; joints; welds; minimizes; levels; metallization; advantages; electrical; properties; density; excellent; backside; contact; compactness; thermal; mechanical; reliability; fabrication method; metal surface; metal layer; integrated circuit; electrically connected; electrical properties; method forms; circuit chip; metal lines; circuit chips; direct laser; electrolytic deposition; film hybrid; metal line; /257/
Citation Formats
Tuckerman, David B. Thin-film chip-to-substrate interconnect and methods for making same. United States: N. p., 1991.
Web.
Tuckerman, David B. Thin-film chip-to-substrate interconnect and methods for making same. United States.
Tuckerman, David B. Tue .
"Thin-film chip-to-substrate interconnect and methods for making same". United States. https://www.osti.gov/servlets/purl/867707.
@article{osti_867707,
title = {Thin-film chip-to-substrate interconnect and methods for making same},
author = {Tuckerman, David B},
abstractNote = {Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {1}
}