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Title: VUV lithography

Abstract

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

Inventors:
 [1];  [2];  [3]
  1. Livermore, CA
  2. Danville, CA
  3. Stockton, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
867660
Patent Number(s):
4980563
Assignee:
United States Department of Energy (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
vuv; lithography; deep; projection; performed; e-beam; pumped; solid; excimer; source; mask; reduction; camera; produces; radiation; range; 1700-1300a; xenon; krypton; argon; shorter; wavelengths; 850-650a; obtained; neon; helium; layer; gas; formed; cryogenically; cooled; plate; bombarded; fluorescence; utilizes; multilayer; mirrors; reflectivity; wavelength; images; resist; coated; substrate; preselected; demagnification; integrally; emitting; formed integrally; cryogenically cooled; projection lithography; shorter wavelength; coated substrate; source produces; reduction camera; solid layer; multilayer mirror; resist coated; pumped solid; e-beam pumped; /250/313/

Citation Formats

George, Edward V, Oster, Yale, and Mundinger, David C. VUV lithography. United States: N. p., 1990. Web.
George, Edward V, Oster, Yale, & Mundinger, David C. VUV lithography. United States.
George, Edward V, Oster, Yale, and Mundinger, David C. Mon . "VUV lithography". United States. https://www.osti.gov/servlets/purl/867660.
@article{osti_867660,
title = {VUV lithography},
author = {George, Edward V and Oster, Yale and Mundinger, David C},
abstractNote = {Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}