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Title: Controlled ion implant damage profile for etching

Abstract

A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

Inventors:
 [1];  [2];  [3]
  1. (Tijeras, NM)
  2. (Edgewood, NM)
  3. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
867648
Patent Number(s):
4978418
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
controlled; implant; damage; profile; etching; process; material; linbo; implanting; plurality; kinetic; energies; etched; contacting; implanted; etchant; various; selected; produce; substantially; uniformly; throughout; entire; depth; zone; tailoring; vertical; damaged; substantially uniformly; substantially uniform; uniformly throughout; kinetic energies; various energies; /216/

Citation Formats

Arnold, Jr., George W., Ashby, Carol I. H., and Brannon, Paul J. Controlled ion implant damage profile for etching. United States: N. p., 1990. Web.
Arnold, Jr., George W., Ashby, Carol I. H., & Brannon, Paul J. Controlled ion implant damage profile for etching. United States.
Arnold, Jr., George W., Ashby, Carol I. H., and Brannon, Paul J. Mon . "Controlled ion implant damage profile for etching". United States. https://www.osti.gov/servlets/purl/867648.
@article{osti_867648,
title = {Controlled ion implant damage profile for etching},
author = {Arnold, Jr., George W. and Ashby, Carol I. H. and Brannon, Paul J.},
abstractNote = {A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

Patent:

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