Controlled ion implant damage profile for etching
Abstract
A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.
- Inventors:
-
- (Tijeras, NM)
- Edgewood, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 867648
- Patent Number(s):
- 4978418
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23F - NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- controlled; implant; damage; profile; etching; process; material; linbo; implanting; plurality; kinetic; energies; etched; contacting; implanted; etchant; various; selected; produce; substantially; uniformly; throughout; entire; depth; zone; tailoring; vertical; damaged; substantially uniformly; substantially uniform; uniformly throughout; kinetic energies; various energies; /216/
Citation Formats
Arnold, Jr., George W., Ashby, Carol I. H., and Brannon, Paul J. Controlled ion implant damage profile for etching. United States: N. p., 1990.
Web.
Arnold, Jr., George W., Ashby, Carol I. H., & Brannon, Paul J. Controlled ion implant damage profile for etching. United States.
Arnold, Jr., George W., Ashby, Carol I. H., and Brannon, Paul J. Mon .
"Controlled ion implant damage profile for etching". United States. https://www.osti.gov/servlets/purl/867648.
@article{osti_867648,
title = {Controlled ion implant damage profile for etching},
author = {Arnold, Jr., George W. and Ashby, Carol I. H. and Brannon, Paul J},
abstractNote = {A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}
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