Tungsten bridge for the low energy ignition of explosive and energetic materials
Abstract
A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.
- Inventors:
-
- Albuquerque, NM
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 867632
- Patent Number(s):
- 4976200
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
F - MECHANICAL ENGINEERING F42 - AMMUNITION F42B - EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- tungsten; bridge; energy; ignition; explosive; energetic; materials; device; disclosed; fabricated; silicon-on-sapphire; substrate; insulating; element; defined; therein; standard; integrated; circuit; fabrication; techniques; layer; selectively; deposited; silicon; chemical; vapor; deposition; finally; conductive; lands; form; found; exhibits; substantially; shorter; times; metal; bridges; foil; igniting; devices; addition; required; common; purpose; circuit fabrication; defined therein; chemical vapor; vapor deposition; integrated circuit; deposition techniques; fabrication techniques; tungsten bridge; exhibits substantially; deposition technique; energetic materials; energy ignition; energetic material; sapphire substrate; conductive lands; /102/
Citation Formats
Benson, David A, Bickes, Jr., Robert W., and Blewer, Robert S. Tungsten bridge for the low energy ignition of explosive and energetic materials. United States: N. p., 1990.
Web.
Benson, David A, Bickes, Jr., Robert W., & Blewer, Robert S. Tungsten bridge for the low energy ignition of explosive and energetic materials. United States.
Benson, David A, Bickes, Jr., Robert W., and Blewer, Robert S. Mon .
"Tungsten bridge for the low energy ignition of explosive and energetic materials". United States. https://www.osti.gov/servlets/purl/867632.
@article{osti_867632,
title = {Tungsten bridge for the low energy ignition of explosive and energetic materials},
author = {Benson, David A and Bickes, Jr., Robert W. and Blewer, Robert S},
abstractNote = {A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}