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Title: Semiconductor laser devices having lateral refractive index tailoring

Abstract

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Inventors:
 [1];  [2];  [3];  [3]
  1. Edgewood, NM
  2. Alburquerque, NM
  3. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
867574
Patent Number(s):
4965806
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; laser; devices; lateral; refractive; index; tailoring; broad-area; diode; active; lasing; region; interposed; upper; cladding; layer; comprising; structure; controllably; varying; profile; substantially; compensate; effect; junction; heating; operation; embodiments; disclosed; controlling; comprises; resistive; strips; non-radiative; linear; junctions; disposed; parallel; embodiment; discloses; multi-layered; selectively; disordered; implanted; diffused; dopant; impurities; variable; thickness; convex; shape; symmetrically; central; axis; teaching; shown; applicable; arrays; diodes; lasing region; laser device; resistive heating; disposed parallel; laser diodes; semiconductor laser; central axis; active region; laser diode; refractive index; cladding layer; structure comprises; symmetrically disposed; variable thickness; comprising structure; lateral refractive; index profile; broad-area semiconductor; active lasing; dopant impurities; controllably varying; /372/

Citation Formats

Ashby, Carol I. H., Hadley, G Ronald, Hohimer, John P, and Owyoung, Adelbert. Semiconductor laser devices having lateral refractive index tailoring. United States: N. p., 1990. Web.
Ashby, Carol I. H., Hadley, G Ronald, Hohimer, John P, & Owyoung, Adelbert. Semiconductor laser devices having lateral refractive index tailoring. United States.
Ashby, Carol I. H., Hadley, G Ronald, Hohimer, John P, and Owyoung, Adelbert. Mon . "Semiconductor laser devices having lateral refractive index tailoring". United States. https://www.osti.gov/servlets/purl/867574.
@article{osti_867574,
title = {Semiconductor laser devices having lateral refractive index tailoring},
author = {Ashby, Carol I. H. and Hadley, G Ronald and Hohimer, John P and Owyoung, Adelbert},
abstractNote = {A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}