Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers

Title: Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers

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Abstract

Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.

Inventors:

Chen, Yok ^[1]

Oak Ridge, TN

Issue Date:: 1990-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

OSTI Identifier:: 867565

Patent Number(s):: 4963755

Assignee:: United States of America as represented by Department of Energy (Washington, DC)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
C09K11/0816 - {with alkaline earth metals}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/16 - Oxides

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S3/1681 - {using colour centres}

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Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; enhancement; useful; luminescence; vacancy; defects; refractory; oxides; tunable; lasers; oxide; crystals; suitable; preparing; provided; characterized; quantum; efficiency; thermal; stability; crystal; transparency; percentage; preparation; involves; removing; substantially; hydrogen; thermochemically; reducing; oxygen; content; produce; anion; subsequently; irradiating; electrons; inactivate; trace; increased; amount; lived; produced; optically; excited; tunable lasers; thermal stability; oxygen content; quantum efficiency; tunable laser; refractory oxide; refractory oxides; optically excited; oxide crystals; oxide crystal; increased amount; /250/252/423/

Citation Formats


                    Chen, Yok. Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers.  United States: N. p., 1990. 
        Web.

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                    Chen, Yok. Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers.  United States.

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                    Chen, Yok. Mon .  
        "Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers".  United States.  https://www.osti.gov/servlets/purl/867565.

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@article{osti_867565,

  title        = {Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers},

  author       = {Chen, Yok},

  abstractNote = {Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1990},

  month        = {1}

}

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