Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers
Abstract
Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.
- Inventors:
-
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 867565
- Patent Number(s):
- 4963755
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; enhancement; useful; luminescence; vacancy; defects; refractory; oxides; tunable; lasers; oxide; crystals; suitable; preparing; provided; characterized; quantum; efficiency; thermal; stability; crystal; transparency; percentage; preparation; involves; removing; substantially; hydrogen; thermochemically; reducing; oxygen; content; produce; anion; subsequently; irradiating; electrons; inactivate; trace; increased; amount; lived; produced; optically; excited; tunable lasers; thermal stability; oxygen content; quantum efficiency; tunable laser; refractory oxide; refractory oxides; optically excited; oxide crystals; oxide crystal; increased amount; /250/252/423/
Citation Formats
Chen, Yok. Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers. United States: N. p., 1990.
Web.
Chen, Yok. Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers. United States.
Chen, Yok. Mon .
"Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers". United States. https://www.osti.gov/servlets/purl/867565.
@article{osti_867565,
title = {Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers},
author = {Chen, Yok},
abstractNote = {Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}