Method and making group IIB metal - telluride films and solar cells
Abstract
A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.
- Inventors:
-
- Redondo Beach, CA
- Northridge, CA
- Issue Date:
- OSTI Identifier:
- 867501
- Patent Number(s):
- 4950615
- Application Number:
- 07/306,469
- Assignee:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XL-7-06074-2
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; iib; metal; telluride; films; solar; cells; technique; disclosed; forming; 13; metal-telluride; cd; zn; 1-x; ltoreq; substrate; 10; comprises; depositing; 18; elements; 19; hg; heating; form; provided; doping; material; chemically; layer; dopant; surface; unreacted; fabricating; film; photovoltaic; cell; contains; semiconductor; 12; presence; halide; metals; causing; formation; grade; rectifying; junction; situ; formed; semiconductor film; solar cell; solar cells; film photovoltaic; photovoltaic cell; comprises depositing; rectifying junction; closed form; /438/136/148/205/
Citation Formats
Basol, Bulent M, and Kapur, Vijay K. Method and making group IIB metal - telluride films and solar cells. United States: N. p., 1990.
Web.
Basol, Bulent M, & Kapur, Vijay K. Method and making group IIB metal - telluride films and solar cells. United States.
Basol, Bulent M, and Kapur, Vijay K. Tue .
"Method and making group IIB metal - telluride films and solar cells". United States. https://www.osti.gov/servlets/purl/867501.
@article{osti_867501,
title = {Method and making group IIB metal - telluride films and solar cells},
author = {Basol, Bulent M and Kapur, Vijay K},
abstractNote = {A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {8}
}