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Title: Polysilicon photoconductor for integrated circuits

Abstract

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Inventors:
 [1];  [2]
  1. (Los Alamos, NM)
  2. (Eatontown, NJ)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
867492
Patent Number(s):
4948741
Assignee:
United States of America as represented by United States (Washington, DC) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
polysilicon; photoconductor; integrated; circuits; photoconductive; element; polycrystalline; silicon; provided; intrinsic; response; time; limit; overall; circuit; undoped; layer; deposited; lpcvd; selected; thickness; dioxide; annealed; temperature; effective; obtain; crystal; sizes; produce; enhanced; current; output; subsequently; exposed; damaged; implantation; damage; factor; fast; silicon layer; integrated circuits; integrated circuit; polycrystalline silicon; response time; crystalline silicon; silicon dioxide; time effective; selected temperature; subsequently exposed; selected thickness; overall circuit; enhanced current; crystal sizes; current output; circuit response; crystalline layer; undoped polycrystalline; photoconductive element; polysilicon photoconductor; limit overall; intrinsic response; /438/

Citation Formats

Hammond, Robert B., and Bowman, Douglas R. Polysilicon photoconductor for integrated circuits. United States: N. p., 1990. Web.
Hammond, Robert B., & Bowman, Douglas R. Polysilicon photoconductor for integrated circuits. United States.
Hammond, Robert B., and Bowman, Douglas R. Mon . "Polysilicon photoconductor for integrated circuits". United States. https://www.osti.gov/servlets/purl/867492.
@article{osti_867492,
title = {Polysilicon photoconductor for integrated circuits},
author = {Hammond, Robert B. and Bowman, Douglas R.},
abstractNote = {A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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