Polysilicon photoconductor for integrated circuits

Hammond, Robert B; Bowman, Douglas R

Title: Polysilicon photoconductor for integrated circuits

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Abstract

A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Inventors:

Hammond, Robert B ^[1]; Bowman, Douglas R ^[2]

Los Alamos, NM
Eatontown, NJ

Issue Date:: 1990-01-01

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

OSTI Identifier:: 867492

Patent Number(s):: 4948741

Assignee:: United States of America as represented by United States (Washington, DC)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L27/144 - Devices controlled by radiation

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/09 - Devices sensitive to infra-red, visible or ultraviolet radiation
H01L31/03682 - {including only elements of Group IV of the Periodic System}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: polysilicon; photoconductor; integrated; circuits; photoconductive; element; polycrystalline; silicon; provided; intrinsic; response; time; limit; overall; circuit; undoped; layer; deposited; lpcvd; selected; thickness; dioxide; annealed; temperature; effective; obtain; crystal; sizes; produce; enhanced; current; output; subsequently; exposed; damaged; implantation; damage; factor; fast; silicon layer; integrated circuits; integrated circuit; polycrystalline silicon; response time; crystalline silicon; silicon dioxide; time effective; selected temperature; subsequently exposed; selected thickness; overall circuit; enhanced current; crystal sizes; current output; circuit response; crystalline layer; undoped polycrystalline; photoconductive element; polysilicon photoconductor; limit overall; intrinsic response; /438/

Citation Formats


                    Hammond, Robert B, and Bowman, Douglas R. Polysilicon photoconductor for integrated circuits.  United States: N. p., 1990. 
        Web.

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                    Hammond, Robert B, & Bowman, Douglas R. Polysilicon photoconductor for integrated circuits.  United States.

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                    Hammond, Robert B, and Bowman, Douglas R. Mon .  
        "Polysilicon photoconductor for integrated circuits".  United States.  https://www.osti.gov/servlets/purl/867492.

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@article{osti_867492,

  title        = {Polysilicon photoconductor for integrated circuits},

  author       = {Hammond, Robert B and Bowman, Douglas R},

  abstractNote = {A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1990},

  month        = {1}

}

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