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Title: Semiconductor devices incorporating multilayer interference regions

Abstract

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Inventors:
 [1];  [2];  [1];  [1]
  1. Albuquerque, NM
  2. Tijeras, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
867481
Patent Number(s):
4947223
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; devices; incorporating; multilayer; interference; regions; reflector; comprising; alternating; layers; materials; electrically; tunable; temperature; insensitive; laser; fabry-perot; configuration; semiconductor laser; alternating layers; semiconductor materials; semiconductor material; semiconductor device; semiconductor devices; devices incorporating; temperature insensitive; /257/359/372/438/

Citation Formats

Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, and Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States: N. p., 1990. Web.
Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, & Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States.
Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, and Zipperian, Thomas E. Mon . "Semiconductor devices incorporating multilayer interference regions". United States. https://www.osti.gov/servlets/purl/867481.
@article{osti_867481,
title = {Semiconductor devices incorporating multilayer interference regions},
author = {Biefeld, Robert M and Drummond, Timothy J and Gourley, Paul L and Zipperian, Thomas E},
abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}