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Title: Semiconductor devices incorporating multilayer interference regions

Abstract

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Inventors:
 [1];  [2];  [1];  [1]
  1. (Albuquerque, NM)
  2. (Tijeras, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
867481
Patent Number(s):
4947223
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; devices; incorporating; multilayer; interference; regions; reflector; comprising; alternating; layers; materials; electrically; tunable; temperature; insensitive; laser; fabry-perot; configuration; semiconductor laser; alternating layers; semiconductor materials; semiconductor material; semiconductor device; semiconductor devices; devices incorporating; temperature insensitive; /257/359/372/438/

Citation Formats

Biefeld, Robert M., Drummond, Timothy J., Gourley, Paul L., and Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States: N. p., 1990. Web.
Biefeld, Robert M., Drummond, Timothy J., Gourley, Paul L., & Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States.
Biefeld, Robert M., Drummond, Timothy J., Gourley, Paul L., and Zipperian, Thomas E. Mon . "Semiconductor devices incorporating multilayer interference regions". United States. https://www.osti.gov/servlets/purl/867481.
@article{osti_867481,
title = {Semiconductor devices incorporating multilayer interference regions},
author = {Biefeld, Robert M. and Drummond, Timothy J. and Gourley, Paul L. and Zipperian, Thomas E.},
abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

Patent:

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