Semiconductor devices incorporating multilayer interference regions
Abstract
A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
- Inventors:
-
- Albuquerque, NM
- Tijeras, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 867481
- Patent Number(s):
- 4947223
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; devices; incorporating; multilayer; interference; regions; reflector; comprising; alternating; layers; materials; electrically; tunable; temperature; insensitive; laser; fabry-perot; configuration; semiconductor laser; alternating layers; semiconductor materials; semiconductor material; semiconductor device; semiconductor devices; devices incorporating; temperature insensitive; /257/359/372/438/
Citation Formats
Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, and Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States: N. p., 1990.
Web.
Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, & Zipperian, Thomas E. Semiconductor devices incorporating multilayer interference regions. United States.
Biefeld, Robert M, Drummond, Timothy J, Gourley, Paul L, and Zipperian, Thomas E. Mon .
"Semiconductor devices incorporating multilayer interference regions". United States. https://www.osti.gov/servlets/purl/867481.
@article{osti_867481,
title = {Semiconductor devices incorporating multilayer interference regions},
author = {Biefeld, Robert M and Drummond, Timothy J and Gourley, Paul L and Zipperian, Thomas E},
abstractNote = {A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1990},
month = {Mon Jan 01 00:00:00 EST 1990}
}
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