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Title: Method of passivating semiconductor surfaces

Abstract

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Inventors:
 [1]
  1. (Golden, CO)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
867428
Patent Number(s):
4935384
Assignee:
United States of America as represented by United States (Washington, DC) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; passivating; semiconductor; surfaces; iii-v; ii-vi; compound; selecting; material; lattice; constant; substantially; mismatched; grown; ultrathin; layer; surface; thickness; sufficient; maintain; coherent; interface; addition; device; formed; disclosed; thickness sufficient; lattice constant; semiconductor compound; semiconductor surface; semiconductor surfaces; ii-vi semiconductor; passivating semiconductor; device formed; constant substantially; /438/117/136/148/257/

Citation Formats

Wanlass, Mark W. Method of passivating semiconductor surfaces. United States: N. p., 1990. Web.
Wanlass, Mark W. Method of passivating semiconductor surfaces. United States.
Wanlass, Mark W. Mon . "Method of passivating semiconductor surfaces". United States. https://www.osti.gov/servlets/purl/867428.
@article{osti_867428,
title = {Method of passivating semiconductor surfaces},
author = {Wanlass, Mark W.},
abstractNote = {A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

Patent:

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