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Title: Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium

Abstract

A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

Inventors:
 [1];  [2];  [1]
  1. Oak Ridge, TN
  2. Knoxville, TN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
867354
Patent Number(s):
4920076
Application Number:
07/181,899
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; enhancing; growth; siosub2; implantation; germanium; conversion; directional; fashion; steam; wet; oxidation; enhanced; prior; unique; advantages; impurity; enhancement; reduction; thermal; budget; time; electrically; inactive; electrically inactive impurity; /438/

Citation Formats

Holland, Orin W, Fathy, Dariush, and White, Clark W. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium. United States: N. p., 1990. Web.
Holland, Orin W, Fathy, Dariush, & White, Clark W. Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium. United States.
Holland, Orin W, Fathy, Dariush, and White, Clark W. Tue . "Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium". United States. https://www.osti.gov/servlets/purl/867354.
@article{osti_867354,
title = {Method for enhancing growth of SiO.sub.2 in Si by the implantation of germanium},
author = {Holland, Orin W and Fathy, Dariush and White, Clark W},
abstractNote = {A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {4}
}