Process for levelling film surfaces and products thereof

Birkmire, Robert W; McCandless, Brian E

Title: Process for levelling film surfaces and products thereof

Full Record
Other Related Research

Abstract

Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.

Inventors:

Birkmire, Robert W ^[1]; McCandless, Brian E ^[1]

Newark, DE

Issue Date:: 1990-03-20

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 867308

Patent Number(s):: 4909863

Application Number:: 07/218,758

Assignee:: University of Delaware (Newark, DE)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L21/465 - Chemical or electrical treatment, e.g. electrolytic etching

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/541 - CuInSe2 material PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0749 - including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/964 - Roughened surface

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/043 - Mechanically stacked PV cells
H01L31/0322 - {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/051 - Etching

Show less

DOE Contract Number:: AC02-83CH10093; XL-7-06031-5

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; levelling; film; surfaces; products; semiconductor; films; photovoltaic; devices; prepared; therefrom; provided; specular; surface; texture; 25; micron; average; planar; modified; exposing; aqueous; solution; bromine; containing; acid; salt; continuing; exposure; time; sufficient; etch; semiconductor film; photovoltaic devices; time sufficient; aqueous solution; photovoltaic device; semiconductor films; surface modified; film surface; specular surface; prepared therefrom; /148/136/216/438/

Citation Formats


                    Birkmire, Robert W, and McCandless, Brian E. Process for levelling film surfaces and products thereof.  United States: N. p., 1990. 
        Web.

Copy to clipboard


                    Birkmire, Robert W, & McCandless, Brian E. Process for levelling film surfaces and products thereof.  United States.

Copy to clipboard


                    Birkmire, Robert W, and McCandless, Brian E. Tue .  
        "Process for levelling film surfaces and products thereof".  United States.  https://www.osti.gov/servlets/purl/867308.

Copy to clipboard


                    
@article{osti_867308,

  title        = {Process for levelling film surfaces and products thereof},

  author       = {Birkmire, Robert W and McCandless, Brian E},

  abstractNote = {Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1990},

  month        = {3}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

Patent Tarasevich, Barbara J [Richland, WA]; Rieke, Peter C [Pasco, WA]

A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate.more » « less
Full Text Available
Amorphous tin-cadmium oxide films and the production thereof

Patent Li, Xiaonan; Gessert, Timothy A

A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.
Full Text Available
Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Patent Perkins, John [Boulder, CO]; Van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David [Evergreen, CO]; ...

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or othermore » opto-electronic properties. « less
Full Text Available
Surface Modified Particles By Multi-Step Addition And Process For The Preparation Thereof

Patent Cook, Ronald Lee [Lakewood, CO]; Elliott, Brian John [Superior, CO]; Luebben, Silvia DeVito [Golden, CO]; ...

The present invention relates to a new class of surface modified particles and to a multi-step surface modification process for the preparation of the same. The multi-step surface functionalization process involves two or more reactions to produce particles that are compatible with various host systems and/or to provide the particles with particular chemical reactivities. The initial step comprises the attachment of a small organic compound to the surface of the inorganic particle. The subsequent steps attach additional compounds to the previously attached organic compounds through organic linking groups.
Full Text Available
Surface Modified Particles By Multi-Step Michael-Type Addition And Process For The Preparation Thereof

Patent Cook, Ronald Lee [Lakewood, CO]; Elliott, Brian John [Superior, CO]; Luebben, Silvia DeVito [Golden, CO]; ...

A new class of surface modified particles and a multi-step Michael-type addition surface modification process for the preparation of the same is provided. The multi-step Michael-type addition surface modification process involves two or more reactions to compatibilize particles with various host systems and/or to provide the particles with particular chemical reactivities. The initial step comprises the attachment of a small organic compound to the surface of the inorganic particle. The subsequent steps attach additional compounds to the previously attached organic compounds through reactive organic linking groups. Specifically, these reactive groups are activated carbon—carbon pi bonds and carbon and non-carbon nucleophilesmore » « less
Full Text Available

Similar Records