Stacked silicide/silicon mid- to long-wavelength infrared detector
Abstract
The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.
- Inventors:
-
- Goleta, CA
- Issue Date:
- OSTI Identifier:
- 867302
- Patent Number(s):
- 4908686
- Application Number:
- 07/226,754
- Assignee:
- California Institute of Technology (Pasadena, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- stacked; silicide; silicon; mid-; long-wavelength; infrared; detector; schottky; barriers; 16; epitaxially; grown; silicides; 10; combined; selective; doping; 22; provides; quantum; efficiency; detectors; 30; wavelengths; compatible; existing; vlsi; technology; infrared detector; schottky barrier; quantum efficiency; epitaxially grown; schottky barriers; /257/
Citation Formats
Maserjian, Joseph. Stacked silicide/silicon mid- to long-wavelength infrared detector. United States: N. p., 1990.
Web.
Maserjian, Joseph. Stacked silicide/silicon mid- to long-wavelength infrared detector. United States.
Maserjian, Joseph. Tue .
"Stacked silicide/silicon mid- to long-wavelength infrared detector". United States. https://www.osti.gov/servlets/purl/867302.
@article{osti_867302,
title = {Stacked silicide/silicon mid- to long-wavelength infrared detector},
author = {Maserjian, Joseph},
abstractNote = {The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {3}
}
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