Method for forming metallic silicide films on silicon substrates by ion beam deposition
Abstract
Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.
- Inventors:
-
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 867300
- Patent Number(s):
- 4908334
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; metallic; silicide; films; silicon; substrates; beam; deposition; formed; contacting; low-energy; metal; moderately; heating; substrate; provides; diffusion; atoms; film; surface; interaction; contact; diffused; provided; contaminant; free; uniform; stoichiometry; grain; size; exhibit; resistivity; values; particular; usefulness; integrated; circuit; production; forming metal; resistivity values; beam deposition; silicon substrates; silicon substrate; grain size; integrated circuit; silicide films; metallic silicide; substrate provides; forming metallic; /438/250/
Citation Formats
Zuhr, Raymond A, and Holland, Orin W. Method for forming metallic silicide films on silicon substrates by ion beam deposition. United States: N. p., 1990.
Web.
Zuhr, Raymond A, & Holland, Orin W. Method for forming metallic silicide films on silicon substrates by ion beam deposition. United States.
Zuhr, Raymond A, and Holland, Orin W. Mon .
"Method for forming metallic silicide films on silicon substrates by ion beam deposition". United States. https://www.osti.gov/servlets/purl/867300.
@article{osti_867300,
title = {Method for forming metallic silicide films on silicon substrates by ion beam deposition},
author = {Zuhr, Raymond A and Holland, Orin W},
abstractNote = {Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1990},
month = {Mon Jan 01 00:00:00 EST 1990}
}
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