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Title: Method of making silicon on insalator material using oxygen implantation

Abstract

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

Inventors:
 [1];  [2];  [1]
  1. (Dallas, TX)
  2. (Richardson, TX)
Issue Date:
OSTI Identifier:
867095
Patent Number(s):
4863878
Assignee:
Texas Instruments Incorporated (Dallas, TX) OSTI
DOE Contract Number:  
DNA001-C-0175
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; silicon; insalator; material; oxygen; implantation; described; embodiments; provide; semiconductor; insulator; structure; providing; layer; susceptible; single; event; upset; errors; seu; due; radiation; formed; implanting; form; insulating; beneath; surface; crystalline; substrate; remaining; provides; nucleation; sites; forming; damage; caused; left; unannealed; formation; epitaxial; growth; superior; characteristics; prevention; carrier; lifetime; layers; annealed; adequate; semiconductor substrate; semiconductor layer; insulating layer; epitaxial layer; epitaxial growth; damage caused; layer provides; crystalline semiconductor; single event; carrier lifetime; layers formed; nucleation sites; event upset; layer beneath; provides superior; structure providing; epitaxial layers; described embodiment; described embodiments; /438/148/

Citation Formats

Hite, Larry R., Houston, Ted, and Matloubian, Mishel. Method of making silicon on insalator material using oxygen implantation. United States: N. p., 1989. Web.
Hite, Larry R., Houston, Ted, & Matloubian, Mishel. Method of making silicon on insalator material using oxygen implantation. United States.
Hite, Larry R., Houston, Ted, and Matloubian, Mishel. Sun . "Method of making silicon on insalator material using oxygen implantation". United States. https://www.osti.gov/servlets/purl/867095.
@article{osti_867095,
title = {Method of making silicon on insalator material using oxygen implantation},
author = {Hite, Larry R. and Houston, Ted and Matloubian, Mishel},
abstractNote = {The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

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