Method for fabricating photovoltaic device having improved short wavelength photoresponse

Catalano, Anthony W

Title: Method for fabricating photovoltaic device having improved short wavelength photoresponse

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Abstract

Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.

Inventors:

Catalano, Anthony W ^[1]

P.O. Box 557, Rushland, PA 18956

Issue Date:: 1989-07-04

OSTI Identifier:: 867024

Patent Number(s):: 4845043

Application Number:: 07/041,532

Assignee:: Catalano; Anthony W. (P.O. Box 557, Rushland, PA 18956)

Patent Classifications (CPCs):: Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/931 - Silicon carbide semiconductor

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/075 - the potential barriers being only of the PIN type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/202 - {including only elements of Group IV of the Periodic System}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

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DOE Contract Number:: ZB4030563

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; fabricating; photovoltaic; device; improved; wavelength; photoresponse; amorphous; p-i-n; silicon; cells; fabricated; reduced; p-dopant; contamination; interface; residual; p-dopants; removed; flushing; deposition; chamber; gaseous; mixture; capable; reacting; excess; doping; contaminants; prior; i-layer; subsequent; p-layer; photovoltaic cells; deposition chamber; gaseous mixture; photovoltaic device; photovoltaic cell; silicon photovoltaic; wavelength photoresponse; mixture capable; /438/136/427/

Citation Formats


                    Catalano, Anthony W. Method for fabricating photovoltaic device having improved short wavelength photoresponse.  United States: N. p., 1989. 
        Web.

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                    Catalano, Anthony W. Method for fabricating photovoltaic device having improved short wavelength photoresponse.  United States.

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                    Catalano, Anthony W. Tue .  
        "Method for fabricating photovoltaic device having improved short wavelength photoresponse".  United States.  https://www.osti.gov/servlets/purl/867024.

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@article{osti_867024,

  title        = {Method for fabricating photovoltaic device having improved short wavelength photoresponse},

  author       = {Catalano, Anthony W},

  abstractNote = {Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1989},

  month        = {7}

}

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