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Title: Method for fabricating photovoltaic device having improved short wavelength photoresponse

Abstract

Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.

Inventors:
 [1]
  1. (P.O. Box 557, Rushland, PA 18956)
Issue Date:
OSTI Identifier:
867024
Patent Number(s):
4845043
Application Number:
07/041,532
Assignee:
Catalano; Anthony W. (P.O. Box 557, Rushland, PA 18956) NREL
DOE Contract Number:  
ZB4030563
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; photovoltaic; device; improved; wavelength; photoresponse; amorphous; p-i-n; silicon; cells; fabricated; reduced; p-dopant; contamination; interface; residual; p-dopants; removed; flushing; deposition; chamber; gaseous; mixture; capable; reacting; excess; doping; contaminants; prior; i-layer; subsequent; p-layer; photovoltaic cells; deposition chamber; gaseous mixture; photovoltaic device; photovoltaic cell; silicon photovoltaic; wavelength photoresponse; mixture capable; /438/136/427/

Citation Formats

Catalano, Anthony W. Method for fabricating photovoltaic device having improved short wavelength photoresponse. United States: N. p., 1989. Web.
Catalano, Anthony W. Method for fabricating photovoltaic device having improved short wavelength photoresponse. United States.
Catalano, Anthony W. Tue . "Method for fabricating photovoltaic device having improved short wavelength photoresponse". United States. https://www.osti.gov/servlets/purl/867024.
@article{osti_867024,
title = {Method for fabricating photovoltaic device having improved short wavelength photoresponse},
author = {Catalano, Anthony W.},
abstractNote = {Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {7}
}

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