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Title: Reflection technique for thermal mapping of semiconductors

Abstract

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Inventors:
 [1]
  1. (Lee, NY)
Issue Date:
OSTI Identifier:
867010
Patent Number(s):
4841150
Application Number:
07/138,238
Assignee:
United States of America as represented by Secretary of Air (Washington, DC) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reflection; technique; thermal; mapping; semiconductors; optically; tested; temperatures; illuminating; tunable; monochromatic; electromagnetic; radiation; observing; light; reflected; transition; occur; wavelength; corresponds; band; gap; energy; semiconductor; image; appreciably; darken; transmitted; temperature; gap energy; light reflected; band gap; electromagnetic radiation; monochromatic electromagnetic; thermal map; /250/356/374/

Citation Formats

Walter, Martin J. Reflection technique for thermal mapping of semiconductors. United States: N. p., 1989. Web.
Walter, Martin J. Reflection technique for thermal mapping of semiconductors. United States.
Walter, Martin J. Tue . "Reflection technique for thermal mapping of semiconductors". United States. https://www.osti.gov/servlets/purl/867010.
@article{osti_867010,
title = {Reflection technique for thermal mapping of semiconductors},
author = {Walter, Martin J.},
abstractNote = {Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {6}
}

Patent:

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