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Title: Method of fabricating optical waveguides by ion implantation doping

Abstract

A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

Inventors:
 [1];  [2];  [3]
  1. Oak Ridge, TN
  2. Toney, AL
  3. Juelich, DE
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
867006
Patent Number(s):
4840816
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; optical; waveguides; implantation; doping; high-quality; quality; oxide; crystals; controlled; epitaxial; recrystallization; provided; masked; linbo; implanted; concentrations; dopant; energies; 350; kev; maintaining; crystal; near; liquid; nitrogen; temperature; produces; amorphous; ti-rich; nonequilibrium; phase; region; subsequent; thermal; annealing; water-saturated; oxygen; atmosphere; 1000; degree; solid-phase; regrowth; crystalline; substrate; single; layer; results; incorporates; structure; standard; diffusion; techniques; excellent; properties; thermal annealing; optical waveguides; single crystalline; single crystal; crystal structure; optical waveguide; liquid nitrogen; optical quality; quality oxide; optical wave; oxide crystals; crystalline substrate; oxygen atmosphere; oxide crystal; crystalline layer; implantation doping; implanted region; /427/385/

Citation Formats

Appleton, Bill R, Ashley, Paul R, and Buchal, Christopher J. Method of fabricating optical waveguides by ion implantation doping. United States: N. p., 1989. Web.
Appleton, Bill R, Ashley, Paul R, & Buchal, Christopher J. Method of fabricating optical waveguides by ion implantation doping. United States.
Appleton, Bill R, Ashley, Paul R, and Buchal, Christopher J. Sun . "Method of fabricating optical waveguides by ion implantation doping". United States. https://www.osti.gov/servlets/purl/867006.
@article{osti_867006,
title = {Method of fabricating optical waveguides by ion implantation doping},
author = {Appleton, Bill R and Ashley, Paul R and Buchal, Christopher J},
abstractNote = {A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}