Substrate solder barriers for semiconductor epilayer growth
Abstract
During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.
- Inventors:
-
- Tijeras, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 866955
- Patent Number(s):
- 4829020
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- substrate; solder; barriers; semiconductor; epilayer; growth; compound; semiconductors; epitaxial; processes; substrates; typically; mounted; support; modular; beam; epitaxy; mounting; indium; method; drawbacks; reacts; difficult; uniformly; wet; diameter; successfully; overcome; sputter; coating; layer; tungsten; carbide; gold; addition; compatible; quality; epilayers; inert; standard; cleaning; etchants; provides; uniform; distribution; energy; radiant; heating; provides uniform; tungsten carbide; compound semiconductors; compound semiconductor; sputter coating; uniform distribution; beam epitaxy; radiant heat; semiconductor epilayers; quality semiconductor; semiconductor epilayer; /117/148/228/428/438/
Citation Formats
Drummond, Timothy J, Ginley, David S, and Zipperian, Thomas E. Substrate solder barriers for semiconductor epilayer growth. United States: N. p., 1989.
Web.
Drummond, Timothy J, Ginley, David S, & Zipperian, Thomas E. Substrate solder barriers for semiconductor epilayer growth. United States.
Drummond, Timothy J, Ginley, David S, and Zipperian, Thomas E. Sun .
"Substrate solder barriers for semiconductor epilayer growth". United States. https://www.osti.gov/servlets/purl/866955.
@article{osti_866955,
title = {Substrate solder barriers for semiconductor epilayer growth},
author = {Drummond, Timothy J and Ginley, David S and Zipperian, Thomas E},
abstractNote = {During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}