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Title: Substrate solder barriers for semiconductor epilayer growth

Abstract

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Inventors:
 [1];  [2];  [2]
  1. (Tijeras, NM)
  2. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
866955
Patent Number(s):
4829020
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
substrate; solder; barriers; semiconductor; epilayer; growth; compound; semiconductors; epitaxial; processes; substrates; typically; mounted; support; modular; beam; epitaxy; mounting; indium; method; drawbacks; reacts; difficult; uniformly; wet; diameter; successfully; overcome; sputter; coating; layer; tungsten; carbide; gold; addition; compatible; quality; epilayers; inert; standard; cleaning; etchants; provides; uniform; distribution; energy; radiant; heating; provides uniform; tungsten carbide; compound semiconductors; compound semiconductor; sputter coating; uniform distribution; beam epitaxy; radiant heat; semiconductor epilayers; quality semiconductor; semiconductor epilayer; /117/148/228/428/438/

Citation Formats

Drummond, Timothy J., Ginley, David S., and Zipperian, Thomas E. Substrate solder barriers for semiconductor epilayer growth. United States: N. p., 1989. Web.
Drummond, Timothy J., Ginley, David S., & Zipperian, Thomas E. Substrate solder barriers for semiconductor epilayer growth. United States.
Drummond, Timothy J., Ginley, David S., and Zipperian, Thomas E. Sun . "Substrate solder barriers for semiconductor epilayer growth". United States. https://www.osti.gov/servlets/purl/866955.
@article{osti_866955,
title = {Substrate solder barriers for semiconductor epilayer growth},
author = {Drummond, Timothy J. and Ginley, David S. and Zipperian, Thomas E.},
abstractNote = {During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

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