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Title: Apparatus for silicon web growth of higher output and improved growth stability

Abstract

This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.

Inventors:
 [1];  [2]
  1. (Penn Hills, PA)
  2. (Monroeville, PA)
Issue Date:
Research Org.:
Jet Propulsion Laboratories
OSTI Identifier:
866953
Patent Number(s):
4828808
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
DOE Contract Number:  
JPL-957207
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
apparatus; silicon; web; growth; output; improved; stability; disclosure; describes; improve; attainable; prior; configurations; modifies; heat; loss; interface; manner; minimizes; thickness; variations; especially; regions; adjacent; bounding; dendrites; unmodified; configuration; thinned; found; origin; crystal; degradation; ultimately; led; termination; according; thinning; reduced; incidence; similarly; web growth; heat loss; disclosure describes; growth interface; silicon web; thickness variation; /117/

Citation Formats

Duncan, Charles S., and Piotrowski, Paul A. Apparatus for silicon web growth of higher output and improved growth stability. United States: N. p., 1989. Web.
Duncan, Charles S., & Piotrowski, Paul A. Apparatus for silicon web growth of higher output and improved growth stability. United States.
Duncan, Charles S., and Piotrowski, Paul A. Sun . "Apparatus for silicon web growth of higher output and improved growth stability". United States. https://www.osti.gov/servlets/purl/866953.
@article{osti_866953,
title = {Apparatus for silicon web growth of higher output and improved growth stability},
author = {Duncan, Charles S. and Piotrowski, Paul A.},
abstractNote = {This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

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