skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thin film solar cell including a spatially modulated intrinsic layer

Abstract

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Inventors:
 [1];  [1];  [2]
  1. (Troy, MI)
  2. (Bloomfield Hills, MI)
Issue Date:
OSTI Identifier:
866893
Patent Number(s):
4816082
Application Number:
07/087,264
Assignee:
Energy Conversion Devices, Inc. (Troy, MI) OSTI
DOE Contract Number:  
ZB-0-60030-4
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
film; solar; cell; including; spatially; modulated; intrinsic; layer; cells; substantially; amorphous; semiconductor; alloy; material; band; gap; portion; narrower; graded; bulk; thickness; region; removed; layer-dopant; interfaces; doped; layers; gradation; effected; circuit; voltage; fill; factor; plural; structure; enhanced; film solar; intrinsic layer; cell structure; cell including; circuit voltage; band gap; solar cell; solar cells; doped layer; alloy material; semiconductor alloy; amorphous semiconductor; portion including; substantially amorphous; gap portion; doped layers; fill factor; /136/257/

Citation Formats

Guha, Subhendu, Yang, Chi-Chung, and Ovshinsky, Stanford R. Thin film solar cell including a spatially modulated intrinsic layer. United States: N. p., 1989. Web.
Guha, Subhendu, Yang, Chi-Chung, & Ovshinsky, Stanford R. Thin film solar cell including a spatially modulated intrinsic layer. United States.
Guha, Subhendu, Yang, Chi-Chung, and Ovshinsky, Stanford R. Tue . "Thin film solar cell including a spatially modulated intrinsic layer". United States. https://www.osti.gov/servlets/purl/866893.
@article{osti_866893,
title = {Thin film solar cell including a spatially modulated intrinsic layer},
author = {Guha, Subhendu and Yang, Chi-Chung and Ovshinsky, Stanford R.},
abstractNote = {One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {3}
}

Patent:

Save / Share: