Random access memory immune to single event upset using a T-resistor
Abstract
In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.
- Inventors:
-
- (Vista, CA)
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 866861
- Patent Number(s):
- 4809226
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- random; access; memory; immune; single; event; upset; t-resistor; cell; resistance; decoupling; network; leg; reduces; errors; caused; interaction; energetic; semiconductor; material; forming; comprises; parallel; legs; containing; series; pair; complementary; transistors; common; gate; connected; node; opposite; formed; resistors; third; resistor; interconnecting; junction; transistor; random access; access memory; cell comprises; semiconductor material; single event; material forming; memory cell; event upset; gate connected; errors caused; cell reduces; decoupling network; /365/
Citation Formats
Ochoa, Jr., Agustin. Random access memory immune to single event upset using a T-resistor. United States: N. p., 1989.
Web.
Ochoa, Jr., Agustin. Random access memory immune to single event upset using a T-resistor. United States.
Ochoa, Jr., Agustin. Sun .
"Random access memory immune to single event upset using a T-resistor". United States. https://www.osti.gov/servlets/purl/866861.
@article{osti_866861,
title = {Random access memory immune to single event upset using a T-resistor},
author = {Ochoa, Jr., Agustin},
abstractNote = {In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}
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