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Title: Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Abstract

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.

Inventors:
 [1];  [2];  [2];  [2];  [2]
  1. (late of Albuquerque, NM)
  2. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
866815
Patent Number(s):
4797716
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
field-effect; transistor; superlattice; channel; carrier; velocities; applied; fields; field; effect; comprises; semiconductor; source; drain; gate; operational; relationship; strained; layer; comprising; alternating; quantum; barrier; layers; selected; pairs; consisting; ingaas; algaas; inas; inalgaas; inalasp; thicknesses; sufficiently; constitute; conduction; band; energy; level; structure; k-vector; space; lowest; gamma; -valley; l-valley; corresponding; orthogonal; directions; defined; planes; perpendicular; thereto; provide; 2d; shape; substantially; two-dimensional; bulk; conduction band; perpendicular thereto; field-effect transistor; field effect; energy level; alternating layers; barrier layer; strained layer; barrier layers; effect transistor; layer thickness; orthogonal directions; comprising alternating; layer pairs; layer superlattice; directions perpendicular; transistor comprises; orthogonal direction; vector corresponding; applied fields; /257/

Citation Formats

Chaffin, deceased, Roger J., Dawson, Ralph, Fritz, Ian J, Osbourn, Gordon C, and Zipperian, Thomas E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States: N. p., 1989. Web.
Chaffin, deceased, Roger J., Dawson, Ralph, Fritz, Ian J, Osbourn, Gordon C, & Zipperian, Thomas E. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States.
Chaffin, deceased, Roger J., Dawson, Ralph, Fritz, Ian J, Osbourn, Gordon C, and Zipperian, Thomas E. Sun . "Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields". United States. https://www.osti.gov/servlets/purl/866815.
@article{osti_866815,
title = {Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields},
author = {Chaffin, deceased, Roger J. and Dawson, Ralph and Fritz, Ian J and Osbourn, Gordon C and Zipperian, Thomas E},
abstractNote = {A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}