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Title: Detector and energy analyzer for energetic-hydrogen in beams and plasmas

Abstract

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

Inventors:
 [1];  [2];  [2]
  1. (Livermore, CA)
  2. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
866762
Patent Number(s):
4782302
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
detector; energy; analyzer; energetic-hydrogen; beams; plasmas; detecting; energetic; hydrogen; atoms; ranging; kev; evacuated; environment; schottky; diode; palladium; palladium-alloy; gate; metal; applied; silicondioxide; layer; n-silicon; substrate; array; detectors; range; sensitivities; form; plasma; rapid; response; time; sensitivity; measuring; fluxes; sensitive; isotopes; insensitive; non-hydrogenic; particles; formed; single; silicon; chip; thin-film; layers; gold; various; thicknesses; successive; serve; particle; energy-filters; energies; particle energy; thin-film layer; film layers; silicon substrate; oxide layer; response time; film layer; rapid response; gate metal; schottky diode; plasma energy; hydrogen detector; evacuated environment; dioxide layer; /324/257/

Citation Formats

Bastasz, Robert J., Hughes, Robert C., and Wampler, William R. Detector and energy analyzer for energetic-hydrogen in beams and plasmas. United States: N. p., 1988. Web.
Bastasz, Robert J., Hughes, Robert C., & Wampler, William R. Detector and energy analyzer for energetic-hydrogen in beams and plasmas. United States.
Bastasz, Robert J., Hughes, Robert C., and Wampler, William R. Fri . "Detector and energy analyzer for energetic-hydrogen in beams and plasmas". United States. https://www.osti.gov/servlets/purl/866762.
@article{osti_866762,
title = {Detector and energy analyzer for energetic-hydrogen in beams and plasmas},
author = {Bastasz, Robert J. and Hughes, Robert C. and Wampler, William R.},
abstractNote = {A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

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