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Title: Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

Abstract

The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

Inventors:
 [1];  [2]
  1. (Midland, MI)
  2. (Fenton, MI)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
866676
Patent Number(s):
4762808
Assignee:
Dow Corning Corporation (Midland, MI) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; semiconducting; amorphous; silicon; films; thermal; decomposition; fluorohydridodisilanes; relates; photoconductive; semiconductive; substrate; vapor; phase; fluorohydridodisilane; mixture; useful; protection; surfaces; including; electronic; devices; silicon films; silicon film; thermal decomposition; amorphous silicon; electronic devices; vapor phase; electronic device; phase thermal; /427/136/423/430/438/

Citation Formats

Sharp, Kenneth G., and D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States: N. p., 1988. Web.
Sharp, Kenneth G., & D'Errico, John J. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes. United States.
Sharp, Kenneth G., and D'Errico, John J. Fri . "Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes". United States. https://www.osti.gov/servlets/purl/866676.
@article{osti_866676,
title = {Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes},
author = {Sharp, Kenneth G. and D'Errico, John J.},
abstractNote = {The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

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