skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Interrupted polysilanes useful as photoresists

Abstract

Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.

Inventors:
 [1]
  1. 2208 Lester Dr, NE., Albuquerque, NM 87112
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
866662
Patent Number(s):
4761464
Assignee:
Zeigler, John M. (2208 Lester Dr, NE., Albuquerque, NM 87112)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
interrupted; polysilanes; useful; photoresists; polysilane; polymers; backbone; atoms; etc; especially; solvent; mode; /528/430/999/

Citation Formats

Zeigler, John M. Interrupted polysilanes useful as photoresists. United States: N. p., 1988. Web.
Zeigler, John M. Interrupted polysilanes useful as photoresists. United States.
Zeigler, John M. Fri . "Interrupted polysilanes useful as photoresists". United States. https://www.osti.gov/servlets/purl/866662.
@article{osti_866662,
title = {Interrupted polysilanes useful as photoresists},
author = {Zeigler, John M},
abstractNote = {Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

Save / Share: