Interrupted polysilanes useful as photoresists
Abstract
Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.
- Inventors:
-
- 2208 Lester Dr, NE., Albuquerque, NM 87112
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 866662
- Patent Number(s):
- 4761464
- Assignee:
- Zeigler, John M. (2208 Lester Dr, NE., Albuquerque, NM 87112)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- interrupted; polysilanes; useful; photoresists; polysilane; polymers; backbone; atoms; etc; especially; solvent; mode; /528/430/999/
Citation Formats
Zeigler, John M. Interrupted polysilanes useful as photoresists. United States: N. p., 1988.
Web.
Zeigler, John M. Interrupted polysilanes useful as photoresists. United States.
Zeigler, John M. Fri .
"Interrupted polysilanes useful as photoresists". United States. https://www.osti.gov/servlets/purl/866662.
@article{osti_866662,
title = {Interrupted polysilanes useful as photoresists},
author = {Zeigler, John M},
abstractNote = {Polysilane polymers in which the Si backbone is interrupted by atoms such as O, Ge, Sn, P, etc., are useful photoresists especially in the solvent development mode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}