Fluorination of amorphous thin-film materials with xenon fluoride
Abstract
A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.
- Inventors:
-
- Haifa, IL
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 866659
- Patent Number(s):
- 4761302
- Assignee:
- United States Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- fluorination; amorphous; thin-film; materials; xenon; fluoride; method; disclosed; producing; fluorine-containing; semiconductor; material; preferably; comprising; silicon; depositing; substrate; introducing; film; deposition; process; preferably comprising; film materials; film deposition; amorphous silicon; semiconductor material; deposition process; film material; amorphous semiconductor; thin-film material; amorphous thin-film; /427/136/
Citation Formats
Weil, Raoul B. Fluorination of amorphous thin-film materials with xenon fluoride. United States: N. p., 1988.
Web.
Weil, Raoul B. Fluorination of amorphous thin-film materials with xenon fluoride. United States.
Weil, Raoul B. Fri .
"Fluorination of amorphous thin-film materials with xenon fluoride". United States. https://www.osti.gov/servlets/purl/866659.
@article{osti_866659,
title = {Fluorination of amorphous thin-film materials with xenon fluoride},
author = {Weil, Raoul B},
abstractNote = {A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}
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