Process and apparatus for obtaining silicon from fluosilicic acid

Sanjurjo, Angel

Title: Process and apparatus for obtaining silicon from fluosilicic acid

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Abstract

Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

Inventors:

Sanjurjo, Angel ^[1]

San Jose, CA

Issue Date:: 1988-06-28

OSTI Identifier:: 866634

Patent Number(s):: 4753783

Application Number:: 06/802,633

Assignee:: SRI International (Menlo Park, CA)

Patent Classifications (CPCs):: C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C01B33/033 - by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B11/00 - Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B11/002 - {Crucibles or containers for supporting the melt}
C30B29/06 - Silicon

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/546 - Polycrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S117/91 - Downward pulling

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T117/1092 - Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

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DOE Contract Number:: 954471-NAS 7-100

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; apparatus; obtaining; silicon; fluosilicic; acid; producing; cost; purity; solar; grade; ingots; single; crystal; quasi; ingot; form; substantially; continuous; operation; stage; reactor; starting; sodium; fluosilicate; metal; electropositive; preferably; separate; compartments; easy; vapor; transport; therebetween; thermally; decomposing; formation; pure; fluoride; continuously; separated; melt; directly; cast; fluosilicic acid; sodium fluosilicate; thermally decomposing; continuous operation; substantially pure; single crystal; solar grade; stage reactor; purity solar; obtaining silicon; metal fluoride; substantially continuous; separate compartments; preferably sodium; pure silicon; vapor transport; silicon ingots; quasi single; reactor starting; grade silicon; continuously separated; ingot form; silicic acid; continuously cast; crystal ingot; /423/

Citation Formats


                    Sanjurjo, Angel. Process and apparatus for obtaining silicon from fluosilicic acid.  United States: N. p., 1988. 
        Web.

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                    Sanjurjo, Angel. Process and apparatus for obtaining silicon from fluosilicic acid.  United States.

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                    Sanjurjo, Angel. Tue .  
        "Process and apparatus for obtaining silicon from fluosilicic acid".  United States.  https://www.osti.gov/servlets/purl/866634.

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@article{osti_866634,

  title        = {Process and apparatus for obtaining silicon from fluosilicic acid},

  author       = {Sanjurjo, Angel},

  abstractNote = {Process and apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {6}

}

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